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ES3D

更新时间: 2024-11-28 17:00:23
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EIC /
页数 文件大小 规格书
2页 107K
描述
Fast / Super Fast Recovery Rectifiers

ES3D 数据手册

 浏览型号ES3D的Datasheet PDF文件第2页 
www.eicsemi.com  
SURFACE MOUNT  
SUPER FAST RECTIFIERS  
ES3A - ES3J  
PRV : 50 - 600 Volts  
Io : 3.0 Amperes  
1.1 ± 0.3  
FEATURES :  
* Glass passivated junction chip  
* High current capability  
* High surge current capability  
* High reliability  
0.1 ± 0.1  
0.20± 0.07  
3.0 ± 0.2  
* Low reverse current  
* Low forward voltage drop  
* Super fast recovery time  
* Pb / RoHS Free  
2.3 ± 0.2  
5.8 ± 0.15  
MECHANICAL DATA :  
* Case : SMC Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Lead Formed for Surface Mount  
* Mounting position : Any  
* Weight : 0.21 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL ES3A ES3B ES3C ES3D ES3E ES3G ES3J UNIT  
VRRM  
VRMS  
VDC  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
3.0  
300  
210  
300  
400  
280  
400  
600  
420  
600  
V
V
V
A
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Current at TL = 100 °C  
IF(AV)  
Maximum Peak Forward Surge Current,  
8.3ms Single half sine wave Superimposed  
on rated load  
IFSM  
100  
A
VF  
IR  
Maximum Peak Forward Voltage at I  
F
= 3.0 A.  
0.95  
1.3  
1.7  
V
10  
500  
35  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
μA  
IR(H)  
Trr  
CJ  
Ta = 100 °C  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Junction Temperature Range  
ns  
pF  
°C  
°C  
50  
40  
TJ  
- 55 to + 150  
- 55 to + 150  
TSTG  
Storage Temperature Range  
Notes :  
( 1 ) Reverse Recovery Test Conditions : I  
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC  
F
= 0.5 A, IR = 1.0 A, Irr = 0.25 A.  
Page 1 of 2  
Rev. 03: October 8, 2012  

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