Datasheet > ES3C

ES3C

更新时间： 2024-11-27 12:49:59

品牌	Logo	应用领域
海湾 - GULFSEMI		二极管光电二极管 IOT 超快速恢复二极管
页数	文件大小	规格书
2页	175K
描述
SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGEï¼50 TO 600V CURRENTï¼3.0A

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中文翻译

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数据手册

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ES3C 数据手册

ES3A THRU ES3J

SURFACE MOUNT FAST

ULTRAFAST RECTIFIER

VOLTAGE：50 TO 600V

CURRENT：3.0A

SMC／DO-214AB

FEATURE

Ideal for surface mount pick and place application

Low profile package

Built-in strain relief

High surge capability

High temperature soldering guaranteed

260℃/10sec/at terminals

Glass passivated chip

Ultrafast recovery time for high efficiency

MECHANICAL DATA

Terminal：Solder plated, solderable per MIL-STD-750,

Method 2026

Case：JEDEC DO-214AB molded plastic body over

passivated chip

Polarity：color band denotes cathode

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated,

for capacitive load, derate current by 20％)

SYMBOL

ES3A

ES3B

ES3C

ES3D

ES3G

ES3J

units

Vrrm

Vrms

Vdc

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

150

105

150

200

140

200

400

280

400

600

420

600

Maximum DC blocking Voltage

100

Maximum Average Forward Rectified

at T_L=100℃

Peak Forward Surge Current 8.3ms single

half sine- wave superimposed on rated load

Maximum Instantaneous Forward Voltage at

rated forward current 3.0A

If(av)

Ifsm

3.0

100.0

0.90

1.25

1.7

10.0

Maximum DC Reverse Current

at rated DC blocking voltage

Ta =25℃

Ta =100℃

µA

500.0

Trr

Maximum Reverse Recovery Time (Note1 )

45.0

12.0

Typical Junction Capacitance

Typical Thermal Resistance

(Note 2)

(Note 3)

Rth(jl)

Tstg, Tj

℃/W

℃

-55 to +150

Storage and Operating Junction Temperature

Note：

1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

3. Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area

Rev.A2

www.gulfsemi.com

中文翻译

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