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ES3BHE3_A/H PDF预览

ES3BHE3_A/H

更新时间: 2024-11-27 19:14:23
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
5页 88K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

ES3BHE3_A/H 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMC, 2 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:12 weeks风险等级:5
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.9 V
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:AEC-Q101
最大重复峰值反向电压:100 V最大反向电流:10 µA
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

ES3BHE3_A/H 数据手册

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ES3A, ES3B, ES3C, ES3D  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated pellet chip junction  
• Ideal for automated placement  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power losses  
• High forward surge capability  
Available  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
SMC (DO-214AB)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
VRRM  
IFSM  
50 V, 100 V, 150 V, 200 V  
100 A  
20 ns  
MECHANICAL DATA  
Case: SMC (DO-214AB)  
trr  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS compliant, and  
AEC-Q101 qualified  
VF  
0.90 V  
TJ max.  
Package  
Diode variations  
150 °C  
SMC (DO-214AB)  
Single  
(“_X” denotes revision code e.g. A, B, .....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
ES3A  
EA  
ES3B  
EB  
ES3C  
EC  
ES3D  
ED  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
35  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 100 °C  
50  
100  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 21-Jul-17  
Document Number: 88589  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

ES3BHE3_A/H 替代型号

型号 品牌 替代类型 描述 数据表
ES3BHE3/57T VISHAY

类似代替

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, P

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