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ES3B_NL

更新时间: 2024-10-29 21:07:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 超快速恢复二极管局域网光电二极管
页数 文件大小 规格书
4页 121K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, LEAD FREE, SMC, 2 PIN

ES3B_NL 技术参数

生命周期:Obsolete零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.55
应用:SUPER FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
JESD-609代码:e3最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:1.66 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:35 µs表面贴装:YES
技术:AVALANCHE端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

ES3B_NL 数据手册

 浏览型号ES3B_NL的Datasheet PDF文件第2页浏览型号ES3B_NL的Datasheet PDF文件第3页浏览型号ES3B_NL的Datasheet PDF文件第4页 
December 2006  
ES3A - ES3J  
Fast Rectifiers  
Features  
For surface mount applications.  
Glass passivated junction.  
Low profile package.  
Easy pick and place.  
Built-in strain relief.  
Superfast recovery times for high efficiency.  
Color Band Denotes Cathode  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
a
Value  
ES3A ES3B ES3C ES3D ES3J  
Symbol  
Parameter  
Units  
VRRM  
IF(AV)  
Maximum Repetitive Reverse Voltage  
50  
100  
150  
200  
600  
V
A
Average Rectified Forward Current,  
.375” lead length @ TA=75°C  
3.0  
Non-repetitive Peak Forward Surge Current  
8.3 ms Single Half-Sine-Wave  
IFSM  
100  
A
TJ, TSTG Operating Junction and Storage Temperature Range  
PD Power Dissipation  
-50 to +150  
1.66  
°C  
W
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.  
Thermal Characteristics  
Symbol  
RθJA  
Parameter  
Value  
47  
Units  
°C/W  
Thermal Resistance, Junction to Ambient *  
RθJL  
Thermal Resistance, Junction to Lead *  
12  
°C/W  
* Device mounted on FR-4 PCB 0.013 mm.  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
VF  
Forward Voltage  
Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A  
Reverse Current @ rated VR  
@ IF = 3.0 A  
0.95  
1.7  
35  
V
Trr  
IR  
20  
ns  
uA  
pF  
TA = 25°C  
TA = 100°C  
10  
500  
Total Capacitance  
VR = 4.0 V, f = 1.0 MHz  
CT  
45  
©2006 Fairchild Semiconductor Corporation  
ES3A - ES3J Rev. F  
1
www.fairchildsemi.com  

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