ES2ABF THRU ES2JBF
SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current -
2.0 Amperes
SMBF
FEATURES
Cathode Band
Top View
For surface mounted applications
Low profile package
0.146(3.70)
0.138(3.50)
0.086(2.20)
0.075(1.90)
Glass Passivated Chip Junction
Superfast reverse recovery time
Lead free in comply with EU RoHS 2011/65/EU diretives
0.173(4.4)
0.165(4.2)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.043(1.10)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case: JEDEC SMBF molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:57mg/0.002oz
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
ES2ABF
E2AB
ES2BBF
E2BB
ES2DBF
E2DB
ES2GBF
E2GB
ES2JBF
E2JB
UNITS
MDD Catalog
Number
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
50
35
50
100
70
200
140
200
400
280
400
600
420
600
VOLTS
VOLTS
VOLTS
VRMS
VDC
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=100 C
I(AV)
Amps
2.0
50
Peak forward surge current
IFSM
VF
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
Volts
1.65
1.0
1.25
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25 C
TA=125 C
(NOTE 1)
5.0
100.0
µ
A
IR
trr
ns
35
Typical junction capacitance (NOTE 2)
CJ
RθJA
pF
C/W
C
45.0
65.0
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
TJ,TSTG
-55 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas