Datasheet > ES2G-HE3/52T

ES2G-HE3/52T

更新时间： 2024-01-17 21:32:52

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	84K
描述
DIODE 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

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技术参数
数据手册

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ES2G-HE3/52T 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

ES2G-HE3/52T 数据手册

ES2F, ES2G

Vishay General Semiconductor

www.vishay.com

Surface Mount Ultrafast Plastic Rectifier

FEATURES

• Glass passivated chip junction

• Ideal for automated placement

• Ultrafast reverse recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

DO-214AA (SMB)

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

MECHANICAL DATA

V_RRM

I_FSM

t_rr

300 V, 400 V

50 A

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

35 ns

V_F

1.1 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

T_Jmax.

150 °C

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

ES2F

ES2G

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_RMS

I_F(AV)

300

225

210

400

300

280

Maximum RMS voltage

Maximum average forward rectified current at T_L= 110 °C

2.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Revision: 07-Feb-12

Document Number: 88588

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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