Datasheet > ES2EF??

ES2EF??

更新时间： 2024-10-31 18:04:39

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
3页	369K
描述
SMAF

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中文翻译

获取价格

数据手册

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ES2EF?? 数据手册

ES2AF THRU ES2JF

Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere

SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER

Features

SMAF



The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

For surface mounted applications

Low reverse leakage



0.106(2.70)

0.094(2.40)

0.063 (1.60)

0.051 (1.30)

Built-in strain relief,ideal for automated

placement High forward surge current capability

High temperature soldering guaranteed:

250°C/10 seconds at terminals

0.146(3.70)

0.130(3.30)

Glass passivated chip junction

0.047(1.20)

0.035(0.90)

0.008(0.20)

0.005(0.12)

0.047(1.20)

0.031(0.80)

Mechanical Data

0.193(4.90)

0.173(4.40)

Case : JEDEC SMAF Molded plastic body

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight

: 0.0018 ounce, 0.064 grams

Maximum Ratings And Electrical Characteristics

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter

MDD

SYMBOLS

UNITS

ES2AF ES2BF ES2CF ES2DF ES2EF ES2GF ES2JF

Marking Code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RRM

100

150

105

150

200

140

200

300

210

300

400

280

400

600

420

600

RMS

Maximum DC blocking voltage

100

(AV)

Maximum average forward rectified current

2.0

at TL=55

℃

Peak forward surge current

8.3ms single half sine-wave

superimposed onrated load (JEDEC Method)

FSM

Maximum instantaneous forward voltage at 2.0A

0.95

1.25

1.70

5.0

50.0

Maximum DC reverse current

at rated DCblocking voltage

=25

TA=125℃

(NOTE 1)

℃

Maximum reverserecovery time

Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

60.0

40.0



℃/

℃

Operating junction and storage temperature range

STG

- 5 0 t o + 1 5 0

Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

DN:T20515A0

http://www.microdiode.com

Rev:2020A0

Page :1

12 3

中文翻译

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