Datasheet > ES2BHE3_A/I

ES2BHE3_A/I

更新时间： 2024-11-20 22:56:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	95K
描述
DIODE GEN PURP 100V 2A DO214AA

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中文翻译

获取价格

数据手册
替代型号

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ES2BHE3_A/I 数据手册

ES2A, ES2B, ES2C, ES2D

Vishay General Semiconductor

www.vishay.com

Surface-Mount Ultrafast Plastic Rectifier

FEATURES

Available

• Glass passivated pellet chip junction

• Ideal for automated placement

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power losses

• High forward surge capability

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

SMB (DO-214AA)

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

Anode

Cathode

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

LINKS TO ADDITIONAL RESOURCES

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer, automotive, and telecommunication.

3D Models

MECHANICAL DATA

Case: SMB (DO-214AA)

PRIMARY CHARACTERISTICS

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHME3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

I_F(AV)

2.0 A

V_RRM

50 V, 100 V, 150 V, 200 V

I_FSM

50 A

20 ns

t_rr

V_F

0.90 V

(“_X” denotes revision code e.g. A, B, .....)

T_Jmax.

150 °C

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

Package

SMB (DO-214AA)

Single

Circuit configuration

Polarity: color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

ES2A

ES2B

ES2C

ES2D

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

Maximum average forward rectified current at T_L= 110 °C

100

I_F(AV)

2.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Revision: 01-Apr-2020

Document Number: 88587

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

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ES2BHE3_A/I 替代型号

型号	品牌	替代类型	描述	数据表
ES2BHE3/5BT	VISHAY	类似代替	暂无描述

与ES2BHE3_A/I相关器件

型号	品牌	获取价格	描述	数据表
ES2BHM3/5BT	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
ES2BL	SUNMATE	获取价格	2.0A patch fast recovery diode 100V SOD-123 series
ES2BL (ER2BL)	HOTTECH	获取价格	SOD-123FL
ES2B-LFR	FRONTIER	获取价格	2A FAST EFFICIENT SURFACE MOUNT RECTIFIER
ES2B-LTP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, P
ES2B-L-TP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, P
ES2B-L-TP-HF	MCC	获取价格	RECTIFIER DIODE
ES2B-LTP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
ES2B-M3/52T	VISHAY	获取价格	DIODE GEN PURP 100V 2A DO214AA
ES2B-M3/5BT	VISHAY	获取价格	DIODE GEN PURP 100V 2A DO214AA

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