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ES2BHE3/5BT PDF预览

ES2BHE3/5BT

更新时间: 2024-11-24 19:54:55
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威世 - VISHAY /
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5页 91K
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ES2BHE3/5BT 数据手册

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ES2A, ES2B, ES2C, ES2D  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated pellet chip junction  
• Ideal for automated placement  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power losses  
• High forward surge capability  
Available  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
SMB (DO-214AA)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.0 A  
VRRM  
IFSM  
50 V, 100 V, 150 V, 200 V  
MECHANICAL DATA  
50 A  
20 ns  
Case: SMB (DO-214AA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHME3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
trr  
VF  
0.90 V  
TJ max.  
Package  
Diode variations  
150 °C  
SMB (DO-214AA)  
Single  
(“_X” denotes revision code e.g. A, B, .....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
ES2A  
EA  
ES2B  
EB  
ES2C  
EC  
ES2D  
ED  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
35  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 110 °C  
50  
100  
IF(AV)  
2.0  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 21-Jul-17  
Document Number: 88587  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

ES2BHE3/5BT 替代型号

型号 品牌 替代类型 描述 数据表
ES2B-E3/5BT VISHAY

完全替代

DIODE GEN PURP 100V 2A DO214AA
ES2BHE3/52T VISHAY

完全替代

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN,
ES2B-E3/52T VISHAY

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DIODE GEN PURP 100V 2A DO214AA

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