Datasheet > ES2B

ES2B

更新时间： 2024-03-03 10:09:23

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	249K
描述
SMB

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ES2B 数据手册

RoHS

ES2A THRU ES2K

COMPLIANT

Surface Mount Super Fast Recovery Rectifier

Features

● Low profile package

● Ideal for automated placement

● Glass passivated chip junction

● High forward surge capability

● Super Fast reverse recovery time

● Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Typical Applications

For use in high frequency rectification of power supplies,

inverters, converters, and freewheeling diodes for consumer

and telecommunication.

Mechanical Data

●

ackage: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

●

Cathode line denotes the cathode end

Polarity:

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J ES2K

PARAMETER

SYMBOL UNIT

Device marking code

ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J ES2K

V_RRM

V_RMS

V_DC

I_O

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100

150

105

150

200

140

200

300

210

400

280

400

500

350

500

600

420

600

800

560

800

Maximum DC blocking Voltage

100

300

Average rectified output current

@60Hz sine wave, resistance load, TL (Fig.1)

2.0

Forward Surge Current (Non-repetitive)

@60Hz Half-sine wave,1 cycle, Tj=25℃

FSM

Forward Surge Current (Non-repetitive)

@1ms, square wave, 1 cycle, Tj=25℃

100

Current squared time

@1ms≤t≤8.3ms Tj=25℃

A²s

℃

I²t

10.375

-55 ~ +150

stg

Storage temperature

Junction temperature

℃

（T =25℃Unless otherwise specified）

■Electrical Characteristics

ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J ES2K

PARAMETER

SYMBOL

UNIT TEST CONDITIONS

Maximum instantaneous

forward voltage

V_F

t_rr

I_FM=2.0A

0.95

1.3

1.7

1.85

I_F=0.5A,I_R=1.0A,

Irr=0.25A

Maximum reverse recovery time

5.0

100

Tj =25℃

Maximum DC reverse current at

rated DC blocking voltage

I_R

μA

Tj =125℃

Measured at 1MHz

Typical junction capacitance

pF and Applied Reverse

Voltage of 4.0 V.D.C

1 / 5

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-S025

Rev. 2.9, 19-Sep-22

www.21yangjie.com

12 3 4 5

下载PDF

与ES2B相关器件

型号	品牌	描述	获取价格	数据表
ES2B/1	VISHAY	DIODE GEN PURP 100V 2A DO214AA	获取价格
ES2B_NL	FAIRCHILD	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN	获取价格
ES2B-13	DIODES	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, PLASTIC, SMB, 2 PIN	获取价格
ES2B-13-F	DIODES	2.0A SURFACE MOUNT SUPER-FAST RECTIFIER	获取价格
ES2B-7	DIODES	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, PLASTIC, SMB, 2 PIN	获取价格
ES2BA	DIODES	2.0A SURFACE MOUNT SUPER-FAST RECTIFIER	获取价格