Datasheet > ES2B

ES2B

更新时间： 2023-12-06 20:00:47

品牌	Logo	应用领域
鲁光 - LGE		超快恢复二极管功效光电二极管
页数	文件大小	规格书
2页	1277K
描述
超快恢复二极管

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ES2B 数据手册

ES2A-ES2K

2.0 AMPS. Surface Mount Super Fast Rectifiers

Features

SMB/DO-214AA

ꢀ

Glass passivated junction chip

For surface mounted application

Low profile package

0.180(4.57)

0.160(4.06)

Built-in strain relief

Ideal for automated placement

Easy pick and place

Superfast recovery time for high efficiency

Glass passivated chip junction

High temperature soldering:

0.086(2.20)

0.077(1.95)

0.155(3.94)

0.130(3.30)

260 C/10 seconds at terminals

0.209(5.30)

0.201(5.10)

ꢀ

Plastic material used carries Underwriters

Laboratory Classification 94V-0

0.012(0.30)

0.006(0.15)

Mechanical Data

0.096(2.44)

0.084(2.13)

ꢀ

Cases: Molded plastic

0.059(1.50)

0.035(0.90)

Terminals: Pure tin plated, lead free.

Polarity: Indicated by cathode band

Weight: 0.093 gram

0.008(0.20)

0.002(0.05)

Dimensions in inches and(millimeters)

Marking Information

LGE：Lu Guang Electronic

XXXX：marking code (ES2A-ES2K)

XXXX

Maximum Ratings and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

ES ES ES ES

Symbol ES ES ES ES

2A 2B 2C 2D

50 100 150 200 300 400 600

Type Number

Units

Maximum Recurrent Peak Reverse

Voltage

700

V_RRM

Maximum RMS Voltage

50 100 150 200 300 400 600

2.0

70 105 140 210 280 420

490

700

V_RMS

V_DC

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current See Fig. 1

I_(AV)

I_FSM

V_F

Peak Forward Surge Current, 8.3 ms

Single Half Sine-wave Superimposed on

Rated Load (JEDEC method )

Maximum Instantaneous Forward Voltage

@ 2.0A

0.95

1.3

1.7

Maximum DC Reverse Current

@T_A=25 C at Rated DC Blocking Voltage

I_R

@ T_A=100 C

350

Maximum Reverse Recovery Time

( Note 1 )

Trr

Typical Junction Capacitance ( Note 2 )

R_θJA

R_θJL

T_J

Maximum Thermal Resistance (Note 3)

C /W

Operating Temperature Range

Storage Temperature Range

-55 to +150

T^STG

1. Reverse Recovery Test Conditions: I^F=0.5A, I^R=1.0A, I^RR=0.25A

2. Measured at 1 MHz and Applied V^R=4.0 Volts

Notes:

3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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ES2B_NL	FAIRCHILD	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN	获取价格
ES2B-13	DIODES	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, PLASTIC, SMB, 2 PIN	获取价格
ES2B-13-F	DIODES	2.0A SURFACE MOUNT SUPER-FAST RECTIFIER	获取价格
ES2B-7	DIODES	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, PLASTIC, SMB, 2 PIN	获取价格
ES2BA	DIODES	2.0A SURFACE MOUNT SUPER-FAST RECTIFIER	获取价格