Datasheet > ES1GFL

ES1GFL

更新时间： 2024-11-19 18:04:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	173K
描述
Super-Fast Recovery Rectifier

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中文翻译

获取价格

数据手册

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ES1GFL 数据手册

SMD Type

Diodes

Transistors

Superfast Recovery Rectifier

ES1AFL ~ ES1JFL

SOD-123FL

Ƶ Features

ƽ Reverse Voltage – 50 to 600 V

ƽ Forward Current – 1 A

ƽ Easy pick and place

ƽ For surface mounted applications

ƽ Low profile package

ƽ Built-in strain relief

Top View

ƽ Superfast recovery times for high efficiency

PINNING

DESCRIPTION

Cathode

Anode

Ƶ Absolute Maximum Ratings and Characteristics

Ratings at 25ć ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Symbol

Unit

1AFL 1BFL 1CFL 1DFL 1EFL 1GFL 1JFL

Repetitive Peak Reverse Voltage

V_RRM

V_RSM

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

600

420

600

Surge Peak Reverse Voltage

Maximum DC Blocking Voltage

V_F

1.25

Instantaneous Forward Voltage at 1A

1.68

I_F(AV)

T_C=125ć

Averaged Forward Current

Peak Forward Surge Current 8.3 ms Single Half

Sine Wave Superimposed on Rated Load

I_FSM

T_a=25ć

Maximum DC Reverse Current

at rated DC blocking voltage

Typical Junction Capacitance

I_R

ȝA

100

T_a=125ć

C_j

t_rr

at V

R=4V, f=1MHz

Maximum Reverse Recovery Time *1

Typical thermal resistance

Junction Temperature

Storage Temperature

RșJA

ć/W

T_j

150

T_stg

-55 to 150

* 1 Measured with I_F= 0.5A, I_R= 1A, I_rr= 0.25A.

* 2 P.C.B mounted with 2ą×2ą(5×5 cm) copper pad areas.

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中文翻译

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