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ES1F

更新时间: 2024-11-02 15:18:19
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
5页 217K
描述
SMA

ES1F 数据手册

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RoHS  
ES1A THRU ES1K  
COMPLIANT  
Surface Mount Super Fast Recovery Rectifier  
Features  
● Low profile package  
● Ideal for automated placement  
● Glass passivated chip junction  
● High forward surge capability  
● Super Fast reverse recovery time  
● Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in high frequency rectification of power supplies,  
inverters, converters, and freewheeling diodes for consumer  
and telecommunication.  
Mechanical Data  
ackage: DO-214AC (SMA)  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified)  
Maximum Ratings  
a
ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J ES1K  
PARAMETER  
SYMBOL UNIT  
ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J ES1K  
Device marking code  
V
V
V
V
V
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
800  
560  
800  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
RMS  
V
100  
Maximum DC blocking Voltage  
DC  
IO  
Average rectified output current  
A
1.0  
30  
@ 60Hz sine wave, Resistance load, TL (FIG.1)  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25  
Forward Surge Current (Non-repetitive)  
IFSM  
A
60  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
@1ms≤t≤8.3ms Tj=25℃  
A2s  
I2t  
3.735  
T
-55 ~ +150  
-55 ~ +150  
Storage temperature  
stg  
T
j
Junction temperature  
(T =25Unless otherwise specified)  
■Electrical Characteristics  
a
ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J ES1K  
PARAMETER  
SYMBOL  
UNIT TEST CONDITIONS  
Maximum instantaneous  
forward voltage  
V
I
=1.0A  
FM  
V
0.95  
1.3  
1.7  
1.85  
F
IF=0.5A,IR=1.0A,  
Irr=0.25A  
Maximum reverse recovery time  
trr  
ns  
35  
5
T =25℃  
j
Maximum DC reverse current at  
rated DC blocking voltage  
I
μA  
pF  
R
100  
12  
T =125℃  
j
Measured at 1MHz  
and Applied Reverse  
Voltage of 4.0 V.D.C  
Typical junction capacitance  
Cj  
18  
8
10  
1 / 5  
S-S751  
Rev. 3.0,19-Sep-22  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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