Datasheet > ES1F

ES1F

更新时间： 2024-11-28 12:57:03

品牌	Logo	应用领域
森美特 - SUNMATE		二极管光电二极管 IOT
页数	文件大小	规格书
2页	302K
描述
0.7A plug-in fast recovery diode 1500V DO-41 series

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ES1F 数据手册

ES1Z - ES1F

FAST RECOVERY RECTIFIER DIODES

VOLTAGE RANGE: 200- 1500V

CURRENT: 0.7 A

Features

Low cost

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easilycleaned with Freon,Alcohol,Isopropanol

and similar solvents

Mechanical Data

Case: D O - 4 1 Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

DO-41

Min

Dim

Max

25.40

4.06

Weight: 0.34 grams (approx.)

Mounting Position: Any

Marking: Type Number

5.21

0.864

2.72

0.71

2.00

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

ES1Z

200

ES1

400

280

400

Symbol

V_RRM

V_RMS

V_DC

ES1A

600

Characteristic

ES1F

1500

1050

1500

Unit

Maximum recurrent peak reverse voltage

Maximum RMS voltage

140

420

200

Maximum DC blocking voltage

Maximum average forw ard rectified current

600

0.7

I_F(AV)

9.5mm lead length,

@T_A=75

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load @T_J=125

I_FSM

V_F

I_R

30.0

2.5

Maximum instantaneous forw ard voltage

@ 0.5/0.7A

Maximum reverse current

@T_A=25

5.0

100.0

350

at rated DC blocking voltage @T_A=100

Maximum reverse recovery time (Note1)

t_rr

Typical junction capacitance

Typical thermal resistance

(Note2)

(Note3)

C_J

R_θ

/ W

Operating junction temperature range

Storage temperature range

-55----+150

-55---- +150

T_J

T_STG

NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.

2. Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.

3. Thermal resistance f rom junction to ambient.

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