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ES1F PDF预览

ES1F

更新时间: 2024-02-16 18:06:57
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 二极管光电二极管IOT快速恢复二极管
页数 文件大小 规格书
2页 58K
描述
FAST RECOVERY RECTIFIER

ES1F 技术参数

生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.55
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
最大输出电流:0.7 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大反向恢复时间:1.5 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

ES1F 数据手册

 浏览型号ES1F的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
ES1F---ES1A  
BL  
VOLTAGE RANGE: 1500 --- 600 V  
CURRENT: 0.7 A  
FAST RECOVERY RECTIFIER  
FEATURES  
Low cost  
DO - 41  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned with Freon,Alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC DO-41,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-750,Method 2026  
Polarity: Color band denotes cathode  
Weight: 0.012 ounces,0.34 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
ES1F  
ES1Z  
ES1  
ES1A  
UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
1500  
1050  
1500  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average forw ard rectified current  
0.5  
0.7  
A
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
IFSM  
20.0  
2.0  
30.0  
A
8.3ms single half-sine-w ave  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 0.5/0.7A  
2.5  
5.0  
V
A
VF  
IR  
Maximum reverse current  
@TA=25  
10.0  
at rated DC blocking voltage @TA=100  
Maximum reverse recovery time (Note1)  
100.0  
350  
15  
ns  
trr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
pF  
CJ  
50  
Rθ  
/ W  
JA  
Operating junction temperature range  
-55----+150  
-55---- +150  
TJ  
Storage temperature range  
TSTG  
NOTE:1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
www.galaxycn.com  
2. Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.  
3. Thermal resistance f rom junction to ambient.  
Document Number 0261063  
BLGALAXY ELECTRICAL  
1.  

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