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ES1D

更新时间： 2024-11-15 14:50:07
品牌 Logo 应用领域
WON-TOP PC光电二极管
页数 文件大小 规格书
4页 41K
描述
SMD

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中文翻译

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ES1D 数据手册

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®
ES1A – ES1J  
1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
Ideally Suited for Automatic Assembly  
B
Low Forward Voltage Drop, High Efficiency  
Surge Overload Rating to 30A Peak  
Low Power Loss  
Super-Fast Recovery Time  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
D
A
F
C
H
G
E
SMA/DO-214AC  
Min  
Mechanical Data  
Dim  
A
Max  
2.92  
4.60  
1.90  
0.305  
5.30  
2.44  
0.203  
1.52  
Case: SMA/DO-214AC, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
2.29  
B
4.00  
C
1.27  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
Weight: 0.064 grams (approx.)  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
0.152  
4.80  
E
F
2.00  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
ES1A ES1B ES1C ES1D ES1E ES1G ES1J  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
150  
105  
200  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
140  
1.0  
V
A
Average Rectified Output Current  
@TL = 110°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
0.95  
1.25  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
100  
µA  
Reverse Recovery Time (Note 1)  
trr  
35  
10  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Lead (Note 3)  
RθJA  
RθJL  
85  
35  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on PCB with 5.0mm x 5.0mm x 0.013mm thick copper pads.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1
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ES1D 替代型号

型号 品牌 替代类型 描述 数据表
ES1DE-TP MCC

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