5秒后页面跳转
ES1C PDF预览

ES1C

更新时间: 2024-02-08 00:30:01
品牌 Logo 应用领域
TRSYS 二极管光电二极管
页数 文件大小 规格书
2页 187K
描述
SURFACE MOUNT SUPERFAST RECTIFIER

ES1C 技术参数

生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.55
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
最大输出电流:0.7 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大反向恢复时间:1.5 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

ES1C 数据手册

 浏览型号ES1C的Datasheet PDF文件第2页 
ES1A THRU ES1J  
SURFACE MOUNT SUPERFAST RECTIFIER  
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere  
FEATURES  
SMA/DO-214AC  
l
l
l
l
l
l
For surface mounted applications  
Low profile package  
Built-in strain relief  
Easy pick and place  
Superfast recovery times for high efficiency  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O  
l
l
Glass passivated junction  
High temperature soldering:  
260 /10 seconds at terminals  
MECHANICAL DATA  
Case: JEDEC DO-214AC molded plastic  
Terminals: Solder plated, solderable per MIL-STD-  
750,  
Method 2026  
Polarity: Indicated by cathode band  
Standard packaging: 12mm tape (EIA-481)  
Weight: 0.002 ounce, 0.064 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase, half wave 60Hz resistive or inductive load.  
For capacitive load, derate current by 20%.  
SYMBOLS ES1A ES1B ES1C ES1D ES1E ES1G ES1J UNITS  
50  
35  
50  
100  
70  
100  
150  
105  
150  
200  
140  
200  
1.0  
300  
210  
300  
400  
280  
400  
600  
420  
600  
Volts  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current,  
at TL=120  
VRRM  
VRMS  
VDC  
I(AV)  
Amps  
Peak Forward Surge Current 8.3ms single half sine-  
wave superimposed on rated load(JEDEC method)  
Maximum Instantaneous Forward Voltage at 1.0A  
Maximum DC Reverse Current TA=25  
At Rated DC Blocking Voltage TA=100  
Maximum Reverse Recovery Time (Note 1)  
Typical Junction capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating and Storage Temperature Range  
IFSM  
30.0  
Amps  
VF  
IR  
0.95  
1.25  
1.7  
Volts  
A
5.0  
100  
35.0  
10.0  
35  
TRR  
CJ  
R JL  
TJ,TSTG  
nS  
PF  
/W  
-50 to +150  
NOTES:  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A  

与ES1C相关器件

型号 品牌 获取价格 描述 数据表
ES1C-13 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, PLASTIC, SMA, 2 PIN
ES1C-7 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, PLASTIC, SMA, 2 PIN
ES1CAF CZSTARSEA

获取价格

SMAF
ES1CAS CZSTARSEA

获取价格

SMAS
ES1CB PACELEADER

获取价格

SURFACE MOUNT SUPERFAST RECTIFIER
ES1CB YANGJIE

获取价格

Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
ES1CBF1 YANGJIE

获取价格

Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
ES1CBF2 YANGJIE

获取价格

Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
ES1CBF3 YANGJIE

获取价格

Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
ES1CD SWST

获取价格

快恢复整流管