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ES1BW

更新时间: 2024-11-19 15:18:47
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
5页 216K
描述
SMA

ES1BW 数据手册

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RoHS  
ES1AW THRU ES1JW  
COMPLIANT  
Surface Mount Super Fast Recovery Rectifier  
Features  
● Low profile package  
● Ideal for automated placement  
● Glass passivated chip junction  
● High forward surge capability  
● Super Fast reverse recovery time  
● Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in high frequency rectification of power supplies,  
inverters, converters, and freewheeling diodes for consumer,  
and telecommunication.  
Mechanical Data  
ackage: DO-214AC (SMA)  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified)  
Maximum Ratings  
a
ES1AW ES1BW ES1CW ES1DW ES1FW ES1GW ES1HW ES1JW  
PARAMETER  
SYMBOL UNIT  
ES1AW ES1BW ES1CW ES1DW ES1FW ES1GW ES1HW ES1JW  
Device marking code  
V
V
V
V
V
A
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
RMS  
V
100  
Maximum DC blocking Voltage  
DC  
IO  
Average rectified output current  
1.0  
30  
@60Hz sine wave, resistance load, TL (Fig.1)  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25  
Forward Surge Current (Non-repetitive)  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
IFSM  
A
60  
A2s  
I2t  
3.735  
@1ms≤t≤8.3ms Tj=25℃  
T
-55 ~ +150  
-55 ~ +150  
Storage temperature  
stg  
T
j
Junction temperature  
(T =25Unless otherwise specified)  
Electrical Characteristics  
a
ES1AW ES1BW ES1CW ES1DW ES1FW ES1GW ES1HW ES1JW  
PARAMETER  
SYMBOL  
UNIT TEST CONDITIONS  
Maximum instantaneous  
forward voltage  
V
I
=1.0A  
FM  
V
0.95  
1.3  
1.7  
F
IF=0.5A,IR=1.0A,  
Irr=0.25A  
Maximum reverse recovery time  
trr  
ns  
35  
5
T =25℃  
j
Maximum DC reverse current at  
rated DC blocking voltage  
I
μA  
R
100  
T =125℃  
j
Measured at 1MHz  
Typical junction capacitance  
Cj  
pF and Applied Reverse  
Voltage of 4.0 V.D.C  
15  
10  
7
1 / 5  
S-S1497  
Rev.1.5, 19-Sep-22  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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