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ES1B

更新时间: 2024-11-18 12:34:03
品牌 Logo 应用领域
TYSEMI 二极管光电二极管IOT
页数 文件大小 规格书
1页 65K
描述
For surface mount applications

ES1B 数据手册

  
Product specification  
KS1A THRU KS1D  
(ES1A THRU ES1D)  
Unit: mm  
DO-214AC(SMA)  
Features  
3.93  
3.73  
4.597  
3.988  
For surface mount applications  
Low profile package  
1.575  
1.397  
2.896  
1.67  
2.489 1.47  
1
2
Ideally suited for use in  
2.38  
2.18  
5.283  
4.775  
very high frequency switching power supplies,  
inverters and as a free wheeling diodes  
Ultrafast recovery times for high efficiency  
Low forward voltage  
5.49  
5.29  
Recommended  
Land Pattern  
2.438  
1.981  
1.524  
0.762  
0.203  
0.051  
0.305  
0.152  
Low leakage current  
Glass passivated chip junction  
Absolute Maximum Ratings TA=25  
Characteristic  
Symbol  
VRRM  
KS1A  
50  
KS1B  
100  
70  
KS1C  
KS1D  
200  
Unit  
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
150  
105  
150  
VRMS  
35  
140  
V
Maximum DC blocking voltage  
VDC  
I(AV)  
50  
100  
200  
V
A
1
Maximum average forward rectified current at TL=25  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
Maximum instantaneous forward voltage at 1.0A  
Maximum DC reverse current at rated TA= 25  
TA= 100  
IFSM  
30  
A
VF  
IR  
0.92  
5
V
uA  
100  
15  
25  
35  
10  
25  
7
Maximum reverse recovery time *1  
trr  
trr  
ns  
ns  
Reverse recovery time  
Maximum stored charge  
TA= 25  
TA= 100 *3  
TA= 25  
Qrr  
CJ  
nC  
TA= 100 *3  
Typical junction capacitance *2  
Maximum thermal resistance *1  
pF  
/W  
85  
35  
R
R
JA  
JL  
-55 to 150  
Operating and storage temperature range  
TJ, TSTG  
*1 Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,Irr=0.25A  
*2 Measured at 1.0MHz and applied reverse voltage of 4.0V  
*3 trr and Qrr measured at: IF=0.6A, VR=30V, di/dt=50A/ms, Irr =10% IRM for measurement of trr  
1 of 1  
4008-318-123  
http://www.twtysemi.com  
sales@twtysemi.com  

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