SMD Type
Diodes
Transistors
Superfast Recovery Rectifier
ES1AF ~ ES1JF
SMAF
Ƶ Features
ƽ Metal silicon junction, majority carrier conduction
ƽ For surface mounted applications
1
2
ƽ Low power loss, high efficiency
ƽ High forward surge current capability
Top View
ƽ For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Simplified outline SMAF and symbol
PIN DESCRIPTION
PIN
1
DESCRIPTION
Cathode
Anode
2
Ƶ Absolute Maximum Ratings Ta = 25ć unless otherwise specified
ES
1AF
ES
1BF
ES
1CF
ES
1DF
ES
1EF
ES
1GF
ES
1JF
Parameter
Symbol
Unit
V
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
Maximum DC Blocking Voltage
VRRM
VRSM
VDC
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
VF
1
1.25
Instantaneous Forward Voltage at 1A
1.68
IF(AV)
IFSM
1
TC=125ć
Averaged Forward Current
Peak forward surge current
Maximum DC Reverse Current
at rated DC blocking voltage
Typical Junction Capacitance
A
30
5
100
TA=25ć
TA=125ć
*1
IR
ȝA
Cj
trr
15
pF
ns
35
Maximum Reverse Recovery Time *2
RthJA
Tj
80
Typical thermal resistance
Junction Temperature
Storage Temperature
*3
ć/W
150
ć
Tstg
-55 to 150
* 1 Measured at 1MHz and applied reverse voltage of 4V D.C.
* 2 Measured with IF = 0.5A, IR = 1A, Irr = 0.25A.
* 3. P.C.B mounted with 2ą×2ą(35×5 cm) copper pad areas.
Ƶ Marking
NO.
ES1AF
ES1A
ES1BF
ES1B
ES1CF
ES1C
ES1DF
ES1D
ES1EF
ES1E
ES1GF
ES1G
ES1JF
ES1J
Marking
1
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