Datasheet > ERJ-3GEY0R00V

ERJ-3GEY0R00V

更新时间： 2024-01-12 21:41:25

品牌	Logo	应用领域
威讯 - RFMD		/
页数	文件大小	规格书
11页	1071K
描述
30MHz TO 512MHz, 9W GaN WIDEBAND

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ERJ-3GEY0R00V 数据手册

RFHA1003

30MHz to

512MHz, 9W

GaN Wide-

band Power

Amplifier

RFHA1003

30MHz TO 512MHz, 9W GaN WIDEBAND

POWER AMPLIFIER

Package: AlN Leadless Chip Carrier / SO8

VGS

Pin 1

Features

 Advanced GaN HEMT Technology

 Output Power of 9W

RF IN

Pin 2,3

RF OUT / VDS

Pin 6,7

 Advanced Heat-Sink Technology

 30MHz to 512MHz

Instantaneous Bandwidth

 Input Internally Matched to 50

GND

BASE

 28V Operation Typical

Performance

 Output Power 39.5dBm

 Gain 19dB

 Power Added Efficiency 70%

 -40°C to 85°C Operating

Temperature

Functional Block Diagram

Product Description

 Large Signal Models Available

The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applica-

tions such as wireless infrastructure, RADAR, two way radios and general purpose

amplification. Using an advanced high power density Gallium Nitride (GaN) semi-

conductor process, these high-performance amplifiers achieve high efficiency, flat

gain, and large instantaneous bandwidth in a single amplifier design. The

RFHA1003 is an input matched GaN transistor packaged in an air cavity ceramic

package which provides excellent thermal stability through the use of advanced

heat sink and power dissipation technologies. Ease of integration is accomplished

through the incorporation of optimized input matching network within the package

that provides wideband gain and power performance in a single amplifier. An exter-

nal output match offers the flexibility of further optimizing power and efficiency for

any sub-band within the overall bandwidth.

Applications

 Pre-Driver for Multiband Wireless

Infrastructure Transmitters

 Class AB Operation for Public

Mobile Radio

 Power Amplifier Stage for

Commercial Wireless

Infrastructure

 General Purpose Tx Amplification

 Test Instrumentation

Ordering Information

 Civilian and Military Radar

RFHA1003S2

RFHA1003SB

RFHA1003SQ

RFHA1003SR

RFHA1003TR7

2-Piece sample bag

5-Piece bag

25-Piece bag

100 Pieces on 7” short reel

750 Pieces on 7” reel

RFHA1003PCBA-410 Fully assembled evaluation board 30MHz to 512MHz;

28V operation

Optimum Technology Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

BiFET HBT



RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

DS120216

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与ERJ-3GEY0R00V相关器件

型号	品牌	获取价格	描述	数据表
ERJ-3GEYJ	PANASONIC	获取价格	Surface Mount Chip Resistors
ERJ3GEYJ100B	PANASONIC	获取价格	Fixed Resistor, Metal Glaze/thick Film, 0.1W, 10ohm, 50V, 5% +/-Tol, 200ppm/Cel, Surface M
ERJ3GEYJ100V	PANASONIC	获取价格	贴片电阻器
ERJ3GEYJ100X	PANASONIC	获取价格	Fixed Resistor, Metal Glaze/thick Film, 0.1W, 10ohm, 50V, 5% +/-Tol, 200ppm/Cel, Surface M
ERJ3GEYJ101B	PANASONIC	获取价格	Fixed Resistor, Metal Glaze/thick Film, 0.1W, 100ohm, 50V, 5% +/-Tol, 200ppm/Cel, Surface
ERJ3GEYJ101V	PANASONIC	获取价格	Fixed Resistor, Metal Glaze/thick Film, 0.1W, 100ohm, 75V, 5% +/-Tol, 200ppm/Cel, Surface
ERJ-3GEYJ101V	TI	获取价格	Contains all support circuitry needed for the ADS1148/ADS1248
ERJ-3GEYJ101V	PANASONIC	获取价格	Thick Film Chip Resistors
ERJ3GEYJ101X	PANASONIC	获取价格	Fixed Resistor, Metal Glaze/thick Film, 0.1W, 100ohm, 50V, 5% +/-Tol, 200ppm/Cel, Surface
ERJ3GEYJ102B	PANASONIC	获取价格	Fixed Resistor, Metal Glaze/thick Film, 0.1W, 1000ohm, 50V, 5% +/-Tol, 200ppm/Cel, Surface

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