TH09/2479
IATF 0113686
TH97/2478
SGS TH07/1033
www.eicsemi.com
SILICON RECTIFIER DIODES
DO - 41
ERA15-01 ~ ERA15-10
PRV : 100 - 1000 Volts
Io : 1.0 Ampere
1.00 (25.4)
0.109 (2.74)
MIN.
0.079 (1.99)
0.205 (5.20)
0.160 (4.10)
FEATURES :
* High current capability
* High surge current capability
* High reliability
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
Dimensions in inches and ( millimeters )
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 50 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ERA ERA ERA ERA ERA ERA
15-01 15-02 15-04 15-06 15-08 15-10
RATING
SYMBOL
UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
A
Maximum DC Blocking Voltage
100
Maximum Average Forward Current (See Fig. 1)
Peak Forward Surge Current Single half sine wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage drop per Diode at IF = 2.0 A
Maximum Repetitive Peak Reverse Current
Junction Temperature Range
IF(AV)
1.0
IFSM
VF
40
1.1
10
A
V
IRRM
TJ
mA
°C
°C
- 40 to + 140
- 40 to + 140
Storage Temperature Range
TSTG
Page 1 of 2
Rev. 02 : March 25, 2005