WTE
POWER SEMICONDUCTORS
ER800F – ER806F
8.0A ISOLATION SUPER-FAST GLASS PASSIVATED RECTIFIER
Features
!
Glass Passivated Die Construction
B
!
!
!
!
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Super-Fast Switching for High Efficiency
High Current Capability
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D
ITO-220A
C
Dim
A
B
C
D
E
Min
14.9
—
Max
15.1
10.5
2.87
4.06
14.22
0.94
3.91 Ø
6.86
4.70
2.79
0.64
1.40
5.20
G
F
A
2.62
3.56
13.46
0.68
3.74 Ø
5.84
4.44
2.54
0.35
1.14
4.95
PIN1
2
F
G
H
I
Mechanical Data
!
!
E
Case: ITO-220A Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
P
J
K
L
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I
L
J
P
H
All Dimensions in mm
Marking: Type Number
PIN 1+
PIN 2 -
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ER
800F
ER
ER
ER
ER
803F
ER
804F
ER
806F
Characteristic
Symbol
Unit
801F 801AF 802F
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
150
105
200
300
210
400
280
600
420
V
RMS Reverse Voltage
VR(RMS)
IO
140
8.0
V
A
Average Rectified Output Current
@TC = 105°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
125
A
Forward Voltage
@IF = 8.0A
VFM
IRM
0.95
1.3
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
10
400
µA
Reverse Recovery Time (Note 1)
trr
Cj
35
70
50
50
nS
pF
°C
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
ER800F – ER806F
1 of 3
© 2002 Won-Top Electronics