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ER803F PDF预览

ER803F

更新时间: 2024-11-20 14:46:43
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 43K
描述
Powerpack

ER803F 技术参数

是否Rohs认证:不符合生命周期:Active
零件包装代码:TO-220AA包装说明:R-PSFM-T2
针数:3Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.73
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
应用:SUPER FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:TO-220AAJESD-30 代码:R-PSFM-T2
JESD-609代码:e0最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:300 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

ER803F 数据手册

 浏览型号ER803F的Datasheet PDF文件第2页浏览型号ER803F的Datasheet PDF文件第3页浏览型号ER803F的Datasheet PDF文件第4页 
®
ER800F – ER806F  
8.0A GLASS PASSIVATED ULTRAFAST RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
B
Superfast 35nS and 50nS Recovery Time  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
ITO-220A  
C
Dim  
A
B
C
D
E
Min  
14.60  
9.70  
2.55  
Max  
15.40  
10.30  
2.85  
High Surge Current Capability  
G
A
E
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
PIN1  
3
4.16  
D
13.00  
0.30  
3.00 Ø  
6.30  
4.20  
2.50  
0.36  
2.60  
4.83  
13.80  
0.90  
F
G
H
I
3.50 Ø  
6.90  
Mechanical Data  
F
Case: ITO-220A, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 1.9 grams (approx.)  
4.80  
P
J
2.90  
K
L
0.80  
I
3.30  
P
5.33  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 0.6 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
ER  
800F  
ER  
ER  
ER  
ER  
803F  
ER  
804F  
ER  
806F  
Characteristic  
Symbol  
Unit  
801F 801AF 802F  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
150  
105  
200  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
140  
8.0  
V
A
Average Rectified Output Current @TC = 100°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
125  
A
Forward Voltage  
@IF = 8.0A  
VFM  
IRM  
0.95  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
500  
µA  
Reverse Recovery Time (Note 1)  
trr  
35  
85  
50  
50  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
Thermal Resistance Junction to Ambient  
Thermal Resistance Junction to Case  
RθJA  
RθJC  
75  
5.0  
°C/W  
RMS Isolation Voltage, t = 1 min  
VISO  
1500  
V
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
°C  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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