DATA SHEET
SEMICONDUCTOR
ER2A~ER2J
SURFACE MOUNT SUPERFAST RECTIFI ER
VOLTAGE - 50 to 600 Volts CURRENT - 2.0 Ampere
FEATURES
• For surface mounted applications
• Low profile package
SMB/DO-214AA Unit:inch(mm)
• Built-in strain relief
.083(2.11)
.075(1.91)
• Easy pick and place
.155(3.94)
.130(3.30)
• Superfast recovery times for high efficiency
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• Glass passivated junction
.185(4.70)
.160(4.06)
• High temperature soldering:
.012(.305)
.006(.152)
260 O / 10 seconds at terminals
C
• High temperature soldering : 260OC / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.096(2.44)
. 083(2.13)
.012(.31)
.006(.15)
MECHANICAL DATA
.050(1.27)
.030(0.76)
.008(.203)
.002(.051)
• Case: JEDEC DO-214AA molded plastic
• Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
.220(5.59)
.200(5.08)
• Polarity: Indicated by cathode band
• Standard packaging: 12mm tape (EIA-481)
• Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°C
Ratings at 25 J ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS ER2A
ER2B
100
70
ER2C
150
ER2D
ER2E
ER2G
ER2J
600
UNITS
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
200
140
200
300
210
300
400
280
400
105
420
Maximum DC Blocking Voltage
100
150
600
Maximum Average Forward Rectified Current ,
I(AV)
2.0
Amps
at TL=110 O
C
Peak Forward Surge Current 8.3ms single half
sinewave superi mposed on rated load(JEDEC method)
Maximum Instantaneous Forward Voltage at 2.0A
IFSM
VF
50.0
Amps
Volts
uA
0.95
1.25
1.7
°C
Maximum DC Reverse Current TA=25
5.0
100
IR
°C
At Rated DC Blocking Voltage TA=100
Maximum Reverse Recovery Time (Note 1)
Typical Junction capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
NOTES:
TRR
CJ
35.0
nS
pF
25.0
RθJA
20.0
°C
/W
°C
TJ,TSTG
-55 to +150
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
3. 8.0mm2 (.013mm thick) land areas
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