5秒后页面跳转
ER2B PDF预览

ER2B

更新时间: 2023-12-06 19:52:49
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 40K
描述
SMD

ER2B 数据手册

 浏览型号ER2B的Datasheet PDF文件第2页浏览型号ER2B的Datasheet PDF文件第3页浏览型号ER2B的Datasheet PDF文件第4页 
®
ER2A – ER2J  
2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
Ideally Suited for Automatic Assembly  
B
Low Forward Voltage Drop, High Efficiency  
Surge Overload Rating to 50A Peak  
Low Power Loss  
Super-Fast Recovery Time  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
D
A
F
C
H
G
E
SMB/DO-214AA  
Min  
Mechanical Data  
Dim  
A
Max  
3.94  
4.70  
2.11  
Case: SMB/DO-214AA, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
3.30  
B
4.06  
C
1.91  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
Weight: 0.093 grams (approx.)  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
0.152  
5.08  
0.305  
5.59  
2.44  
0.203  
1.27  
E
F
2.13  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
ER2A ER2B ER2C ER2D ER2E ER2G ER2J  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
150  
105  
200  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
140  
2.0  
V
A
Average Rectified Output Current  
@TL = 110°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
50  
A
Forward Voltage  
@IF = 2.0A  
VFM  
IRM  
0.95  
1.25  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
350  
µA  
Reverse Recovery Time (Note 1)  
trr  
35  
18  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Lead (Note 3)  
RθJA  
RθJL  
75  
20  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on PCB with 5.0mm x 5.0mm x 0.013mm thick copper pads.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

与ER2B相关器件

型号 品牌 获取价格 描述 数据表
ER2B1 MICROSEMI

获取价格

3 AMP ENCAPSULATED ASSEMBLIES
ER2BA BL Galaxy Electrical

获取价格

SURFACE MOUNT RECTIFIER
ER2BA LGE

获取价格

暂无描述
ER2BA WON-TOP

获取价格

SMD
ER2BAF SUNMATE

获取价格

2.0A patch fast recovery diode 100V SMAF series
ER2BA-T3 WTE

获取价格

2.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
ER2BA-T3-LF WTE

获取价格

暂无描述
ER2BF SUNMATE

获取价格

2.0A patch fast recovery diode 100V SMBF series
ER2BF PANJIT

获取价格

SURFACE MOUNT SUPERFAST RECTIFIER
ER2B-G SENSITRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, GREEN, PLASTIC, S