DATA SHEET
ER1A~ER1J
SEMICONDUCTOR
SURFACE MOUNT SUPERFAST RECTIFI ER
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere
FEATURES
• For surfacemounted applications
• Low profile package
SMB/DO-214AA Unit:inch(mm)
• Built-in strainrelief
• Easy pick andplace
.083(2.11)
.075(1.91)
• Superfast recovery times for high efficiency
• Plastic packagehas Underwriters Laboratory
FlammabilityClassification 94V-O
• Glass passivated junction
.155(3.94)
.130(3.30)
• High temperature soldering:
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
°C
260 J /10 seconds at terminals
°C
• High temperature soldering : 260
/10 seconds at terminals
• Pb freeproduct at available: 99% Sn above meet RoHS
environment substance directive request
MECHANICAL DATA
.096(2.44)
.083(2.13)
.012(.31)
.006(.15)
.050(1.27)
.030(0.76)
.008(.203)
.002(.051)
• Case: JEDEC DO-214AAmoldedplastic
• Terminals: Solder plated, solderable per
• MIL-STD-750, Method 2026
.220(5.59)
.200(5.08)
• Polarity: Indicated by cathodeband
• Standard packaging: 12mm tape (EIA-481)
• Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°C
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS ER1A
ER1B
100
70
ER1C
ER1D
200
ER1E
300
ER1G
400
ER1J
600
UNITS
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
150
105
150
140
210
280
420
Maximum DC Blocking Voltage
100
200
300
400
600
Maximum Average Forward Rectified Current ,
at TL=100 OC
I(AV)
1.0
Amps
Peak Forward Surge Current 8.3ms single half
sinewave
IFSM
30.0
Amps
super imposed on rated load(JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current TA=25
At Rated DC Blocking Voltage TA=100
Maximum Reverse Recovery Time (Note 1)
Typical Junction capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
NOTES:
VF
IR
0.95
1.25
1.7
Volts
uA
5.0
100
TRR
CJ
35.0
nS
pF
10.0
RθJA
34
°C
/W
TJ,TSTG
-55to +150
°C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz andAppliedreversevoltage of 4.0volts
3. 8.0mm2(.013mm thick) land areas
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REV.02 20110725