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ER1004FCT-LF PDF预览

ER1004FCT-LF

更新时间: 2024-11-10 20:43:03
品牌 Logo 应用领域
WTE 超快速恢复二极管局域网
页数 文件大小 规格书
4页 52K
描述
Rectifier Diode, 1 Phase, 2 Element, 5A, 400V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220, 3 PIN

ER1004FCT-LF 数据手册

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WTE  
POWER SEMICONDUCTORS  
ER1000FCT – ER1006FCT  
10A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER  
Features  
Glass Passivated Die Construction  
B
Super-Fast Switching  
ITO-220  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
C
Dim  
A
B
C
D
E
Min  
14.60  
9.70  
2.55  
2.70  
13.00  
0.50  
3.00 Ø  
6.30  
4.20  
2.50  
0.50  
2.70  
2.29  
Max  
15.40  
10.30  
2.85  
G
A
E
PIN1  
2
3
3.30  
D
13.80  
0.75  
F
G
H
I
3.50 Ø  
6.90  
Mechanical Data  
F
Case: ITO-220, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 2.24 grams (approx.)  
4.80  
P
J
2.90  
K
L
0.75  
I
3.15  
P
2.79  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1 -  
PIN 3 -  
+
PIN 2  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
ER  
ER  
ER  
ER  
ER  
ER  
ER  
Characteristic  
Symbol  
Unit  
1000FCT 1001FCT 1001AFCT 1002FCT 1003FCT 1004FCT 1006FCT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
150  
105  
200  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
140  
10  
V
A
Average Rectified Output Current  
IO  
@TC = 100°C  
Non-Repetitive Peak Forward Surge  
Current 8.3ms Single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
150  
A
Forward Voltage  
@IF = 5.0A  
VFM  
IRM  
0.95  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage @TA = 125°C  
@TA = 25°C  
10  
400  
µA  
Reverse Recovery Time (Note 1)  
trr  
Cj  
35  
70  
50  
50  
nS  
pF  
°C  
Typical Junction Capacitance (Note 2)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
ER1000FCT – ER1006FCT  
1 of 4  
© 2006 Won-Top Electronics  

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