Datasheet > ER1003FCT

ER1003FCT

更新时间： 2023-12-06 20:00:20

品牌	Logo	应用领域
WON-TOP		/
页数	文件大小	规格书
4页	44K
描述
Powerpack

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ER1003FCT 数据手册

ER1000FCT – ER1006FCT

10A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER

WON-TOP ELECTRONICS

Features



Glass Passivated Die Construction



Superfast 35nS and 50nS Recovery Time

Low Forward Voltage Drop

Low Reverse Leakage Current

ITO-220

Dim

Min

14.60

9.70

2.55

—

Max

15.40

10.30

2.85

High Surge Current Capability

Epoxy Meets UL 94V-0 Classification

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

PIN1

4.16

13.00

0.50

3.00 Ø

6.30

4.20

2.50

0.50

2.60

2.29

13.80

0.75

3.50 Ø

6.90

Mechanical Data



Case: ITO-220, Full Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 1.9 grams (approx.)

4.80

2.90

0.75



3.30

2.79

Mounting Position: Any

All Dimensions in mm

Mounting Torque: 0.6 N.m Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1

PIN 3

PIN 2

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

1000FCT 1001FCT 1001AFCT 1002FCT 1003FCT 1004FCT 1006FCT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

150

105

200

140

300

210

400

280

600

420

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

Total Device

Per Diode

5.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed

on Rated Load (JEDEC Method)

IFSM

150

Forward Voltage per diode

@I_F= 5.0A

VFM

IRM

0.95

1.3

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 100°C

500

µA

Reverse Recovery Time (Note 1)

trr

Typical Junction Capacitance (Note 2)

Thermal Resistance Junction to Ambient per diode

Thermal Resistance Junction to Case per diode

RθJA

RθJC

4.5

°C/W

RMS Isolation Voltage, t = 1 min

VISO

1500

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Revision: September, 2012

www.wontop.com

12 3 4

下载PDF

与ER1003FCT相关器件

型号	品牌	描述	获取价格	数据表
ER1003FCT-G	SENSITRON	Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, TO-220AB, LEAD FREE, PLAST	获取价格
ER1003FCT-LF	WTE	Rectifier Diode, 1 Phase, 2 Element, 5A, 300V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, P	获取价格
ER1003F-G	SENSITRON	Rectifier Diode, 1 Phase, 1 Element, 10A, 300V V(RRM), Silicon, TO-220AC, LEAD FREE, PLAST	获取价格
ER1003F-LF	WTE	Rectifier Diode, 1 Phase, 1 Element, 10A, 300V V(RRM), Silicon, TO-220, ROHS COMPLIANT, PL	获取价格
ER1003-LF	WTE	Rectifier Diode, 1 Phase, 1 Element, 10A, 300V V(RRM), Silicon, TO-220, ROHS COMPLIANT, PL	获取价格
ER1004	WTE	10A SUPER-FAST GLASS PASSIVATED RECTIFIER	获取价格