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ER1001FCT-LF PDF预览

ER1001FCT-LF

更新时间: 2024-11-08 13:07:43
品牌 Logo 应用领域
WTE 整流二极管
页数 文件大小 规格书
3页 49K
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ER1001FCT-LF 数据手册

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WTE  
POWER SEMICONDUCTORS  
ER1000 – ER1006  
10A SUPER-FAST GLASS PASSIVATED RECTIFIER  
Features  
!
Glass Passivated Die Construction  
B
!
!
!
!
!
Super-Fast Switching for High Efficiency  
High Current Capability  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D  
TO-220A  
C
Dim  
A
B
C
D
E
Min  
14.9  
Max  
15.1  
10.5  
2.87  
4.06  
14.22  
0.94  
3.91 Ø  
6.86  
4.70  
2.79  
0.64  
1.40  
5.20  
G
F
A
2.62  
3.56  
13.46  
0.68  
3.74 Ø  
5.84  
4.44  
2.54  
0.35  
1.14  
4.95  
PIN1  
2
F
G
H
I
Mechanical Data  
!
!
E
Case: TO-220A Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 2.24 grams (approx.)  
Mounting Position: Any  
P
J
K
L
!
!
!
!
I
L
J
P
H
All Dimensions in mm  
Marking: Type Number  
PIN 1 +  
PIN 2 -  
+
Case  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
ER  
1000  
ER  
ER  
ER  
ER  
1003  
ER  
1004  
ER  
1006  
Characteristic  
Symbol  
Unit  
1001 1001A 1002  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
150  
105  
200  
300  
210  
400  
280  
600  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
140  
10  
420  
V
A
Average Rectified Output Current  
@TC = 105°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
150  
A
Forward Voltage  
@IF = 10A  
VFM  
IRM  
0.95  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
500  
µA  
Reverse Recovery Time (Note 1)  
trr  
Cj  
35  
70  
50  
50  
nS  
pF  
°C  
Typical Junction Capacitance (Note 2)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
ER1000 – ER1006  
1 of 3  
© 2002 Won-Top Electronics  

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