Datasheet > ER1000CT

ER1000CT

更新时间： 2024-09-20 14:50:55

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Powerpack

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数据手册

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ER1000CT 数据手册

ER1000CT – ER1006CT

10A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER

WON-TOP ELECTRONICS

Features



Glass Passivated Die Construction



Superfast 35nS and 50nS Recovery Time

Low Forward Voltage Drop

Low Reverse Leakage Current

TO-220

Dim

Min

13.90

9.80

2.54

3.56

12.70

0.51

3.55 Ø

5.75

4.16

2.03

0.30

1.14

2.29

Max

15.90

10.70

3.43

High Surge Current Capability

Epoxy Meets UL 94V-0 Classification

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

PIN1

4.56

14.73

0.96

4.09 Ø

6.85

Mechanical Data



Case: TO-220, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 1.9 grams (approx.)

5.00

2.92

0.65



1.40

2.79

Mounting Position: Any

All Dimensions in mm

Mounting Torque: 0.6 N.m Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1

PIN 3

PIN 2

Case

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

1000CT 1001CT 1001ACT 1002CT 1003CT 1004CT 1006CT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

150

105

200

140

300

210

400

280

600

420

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

Total Device

Per Diode

5.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed

on Rated Load (JEDEC Method)

IFSM

150

Forward Voltage per diode

@I_F= 5.0A

VFM

IRM

0.95

1.3

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 100°C

500

µA

Reverse Recovery Time (Note 1)

trr

Typical Junction Capacitance (Note 2)

Thermal Resistance Junction to Ambient per diode

Thermal Resistance Junction to Case per diode

RθJA

RθJC

3.0

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Revision: September, 2012

www.wontop.com

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