Datasheet > ER1000_04

ER1000_04

更新时间： 2024-09-19 03:34:43

品牌	Logo	应用领域
强茂 - PANJIT		整流二极管快速恢复二极管
页数	文件大小	规格书
2页	38K
描述
SUPERFAST RECOVERY RECTIFIERS

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中文翻译

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数据手册

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ER1000_04 数据手册

DATA SHEET

ER1000~ER1004

SUPERFAST RECOVERY RECTIFIERS

Unit : inch (mm)

TO-220AC

50 to 400 Volts

VOLTAGE

FEATURES

CURRENT 10 Amperes

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

Flame Retardant Epoxy Molding Compound.

.139(3.55)

MIN

.054(1.39)

.045(1.15)

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• Super fast recovery times, high voltage.

• Both normal and Pb free product are available :

Normal : 80~95% Sn, 5~20% Pb

Pb free: 98.5% Sn above

.038(0.96)

.019(0.50)

.025(0.65)MAX

MECHANICALDATA

Case: ITO-220AC Molded plastic

Terminals: Lead solderable per MIL-STD-202, Method 208

Polarity: As marked.

.1(2.54)

Standard packaging: Any

Weight: 0.08 ounces, 2.24grams.

MAXIMUMRATINGANDELECTRICALCHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAMETER

SYMBOL ER1000

ER1001 ER1001A ER1002 ER1003 ER1004

UNITS

Maximum Recurrent Peak Reverse Voltage

RRM

RMS

100

150

105

150

200

140

200

300

210

300

400

280

400

Maximum RMS Voltage

Maximum DC Blocking Voltage

100

Maximum Average Forward Current .375"(9.5mm)

10.0

150

lead length at Tc =100^O

Peak Forward Surge Current, 8.3ms single half sine-wave

superimposed on rated load(JEDEC method)

FSM

Maximum Forward Voltage at 10A, per element

0.95

1.30

Maximum DC Reverse Current at TA=25^O

Rated DC Blocking VoltageTA=100^O

500

Maximum Reverse Recovery Time (Note 2)

Typical Junction capacitance (Note 1)

Maximum Thermal Resistance

RθJC

3.0

^OC / W

^OC

Operating Junction and Storage Temperature Range

,TSTG

-50 TO +150

NOTES:

1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.

3. Both Bonding and Chip structure are available.

PAGE . 1

STAD-AUG.24.2004

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