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EPC320 PDF预览

EPC320

更新时间: 2024-11-28 10:14:15
品牌 Logo 应用领域
EPC 光电二极管光电二极管
页数 文件大小 规格书
10页 378K
描述
High sensitive photodiodes

EPC320 数据手册

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epc3xx  
High sensitive photodiodes  
General Description  
Features  
The epc3xx family products are high-sensitive photo diodes for  
light-barrier, light-curtain, and the like applications. These photo  
diodes are designed to be used in a reverse-bias mode.  
Low dark current  
High quantum efficiency  
High dynamic range  
Diodes can be used in parallel  
CSP package with very small footprint  
Near infrared and visible version available  
Customer specific wavelength filter upon request  
This device allows the design of short to long range light barriers  
from a few millimeters up to tens of meters.  
Using chips from the epc3xx product line, linear or two dimen-  
sional arrays can be formed for any application, be it triangulation,  
spot location, angle measurement, rotary encoders, or similar.  
Also, spectral sensitive detectors can easily be designed by  
applying color filters in front of the photo diodes.  
Applications  
Light barriers ranging from millimeters to tens of meters  
Light curtains  
Smoke detectors  
Liquid detectors  
Heart beat monitors  
Position detection (rotary, linear, angle, etc.)  
IR remote control of Hi-Fi, TV sets and other equipment  
Leveling instruments  
Differential measurement  
Linear photo diode arrays  
Also, other mechanical dimensions are available upon request. It  
is be possible to manufacture photo diodes of up to 15x15 mm or  
even bigger. Such a 15x15 mm device then would contain 450  
individual photo diodes, each of them individually accessible. All  
diodes feature a very high quantum efficiency of 90% in the near  
IR range, a reverse breakdown voltage of up to 30 Volts and a  
response time down to less than 100ns. All devices are available  
upon request with optical bandpass filters.  
Product Range Overview  
connection  
connection  
connection  
connection  
connection  
R
connection  
R
R
R
R
connection  
connection  
connection  
R
R
R
R
connection  
connection  
connection  
connection  
connection  
connection  
R : refer to chapter “Electrical isolation between individual diodes”  
Typ. Dark  
Current  
at 20°C (pA )  
No. of  
Photo  
Diodes  
Diode  
Length  
(mm)  
Diode  
Width  
(mm)  
Total Active  
Area  
Ideal Bias  
Voltage  
(V)  
Wavelength  
(nm)  
Model  
Footprint  
(mm2)  
Single diode  
epc300  
1
2
1.0  
1.0  
2.0  
2.0  
4.0  
0.5  
1.0  
1.0  
2.0  
2.0  
0.43  
0.86  
1.71  
3.42  
6.84  
20  
40  
5
5
5
5
5
400 - 1050  
400 - 1050  
400 - 1050  
400 - 1050  
400 - 1050  
---  
CSP4  
CSP8  
CSP16  
CSP32  
epc310  
4
80  
epc320  
8
160  
320  
epc330  
16  
Type specific characteristics (all diodes of the array connected in parallel)  
© 2011 ESPROS Photonics Corporation  
Characteristics subject to change without notice  
1
Datasheet epc3xx - V2.3  
www.espros.ch  

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