epc3xx
High sensitive photodiodes
General Description
Features
The epc3xx family products are high-sensitive photo diodes for
light-barrier, light-curtain, and the like applications. These photo
diodes are designed to be used in a reverse-bias mode.
Low dark current
High quantum efficiency
High dynamic range
Diodes can be used in parallel
CSP package with very small footprint
Near infrared and visible version available
Customer specific wavelength filter upon request
This device allows the design of short to long range light barriers
from a few millimeters up to tens of meters.
Using chips from the epc3xx product line, linear or two dimen-
sional arrays can be formed for any application, be it triangulation,
spot location, angle measurement, rotary encoders, or similar.
Also, spectral sensitive detectors can easily be designed by
applying color filters in front of the photo diodes.
Applications
Light barriers ranging from millimeters to tens of meters
Light curtains
Smoke detectors
Liquid detectors
Heart beat monitors
Position detection (rotary, linear, angle, etc.)
IR remote control of Hi-Fi, TV sets and other equipment
Leveling instruments
Differential measurement
Linear photo diode arrays
Also, other mechanical dimensions are available upon request. It
is be possible to manufacture photo diodes of up to 15x15 mm or
even bigger. Such a 15x15 mm device then would contain 450
individual photo diodes, each of them individually accessible. All
diodes feature a very high quantum efficiency of 90% in the near
IR range, a reverse breakdown voltage of up to 30 Volts and a
response time down to less than 100ns. All devices are available
upon request with optical bandpass filters.
Product Range Overview
connection
connection
connection
connection
connection
R
connection
R
R
R
R
connection
connection
connection
R
R
R
R
connection
connection
connection
connection
connection
connection
R : refer to chapter “Electrical isolation between individual diodes”
Typ. Dark
Current
at 20°C (pA )
No. of
Photo
Diodes
Diode
Length
(mm)
Diode
Width
(mm)
Total Active
Area
Ideal Bias
Voltage
(V)
Wavelength
(nm)
Model
Footprint
(mm2)
Single diode
epc300
1
2
1.0
1.0
2.0
2.0
4.0
0.5
1.0
1.0
2.0
2.0
0.43
0.86
1.71
3.42
6.84
20
40
5
5
5
5
5
400 - 1050
400 - 1050
400 - 1050
400 - 1050
400 - 1050
---
CSP4
CSP8
CSP16
CSP32
epc310
4
80
epc320
8
160
320
epc330
16
Type specific characteristics (all diodes of the array connected in parallel)
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
1
Datasheet epc3xx - V2.3
www.espros.ch