Datasheet > EPC300

EPC300

更新时间： 2024-09-27 10:14:11

品牌	Logo	应用领域
EPC		光电二极管光电二极管
页数	文件大小	规格书
10页	378K
描述
High sensitive photodiodes

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EPC300 数据手册

epc3xx

High sensitive photodiodes

General Description

Features

The epc3xx family products are high-sensitive photo diodes for

light-barrier, light-curtain, and the like applications. These photo

diodes are designed to be used in a reverse-bias mode.



Low dark current

High quantum efficiency

High dynamic range

Diodes can be used in parallel

CSP package with very small footprint

Near infrared and visible version available

Customer specific wavelength filter upon request

This device allows the design of short to long range light barriers

from a few millimeters up to tens of meters.

Using chips from the epc3xx product line, linear or two dimen-

sional arrays can be formed for any application, be it triangulation,

spot location, angle measurement, rotary encoders, or similar.

Also, spectral sensitive detectors can easily be designed by

applying color filters in front of the photo diodes.

Applications



Light barriers ranging from millimeters to tens of meters

Light curtains

Smoke detectors

Liquid detectors

Heart beat monitors

Position detection (rotary, linear, angle, etc.)

IR remote control of Hi-Fi, TV sets and other equipment

Leveling instruments

Differential measurement

Linear photo diode arrays

Also, other mechanical dimensions are available upon request. It

is be possible to manufacture photo diodes of up to 15x15 mm or

even bigger. Such a 15x15 mm device then would contain 450

individual photo diodes, each of them individually accessible. All

diodes feature a very high quantum efficiency of 90% in the near

IR range, a reverse breakdown voltage of up to 30 Volts and a

response time down to less than 100ns. All devices are available

upon request with optical bandpass filters.

Product Range Overview

connection

R : refer to chapter “Electrical isolation between individual diodes”

Typ. Dark

Current

at 20°C (pA )

No. of

Photo

Diodes

Diode

Length

(mm)

Diode

Width

(mm)

Total Active

Area

Ideal Bias

Voltage

(V)

Wavelength

(nm)

Model

Footprint

(mm²)

Single diode

epc300

1.0

2.0

4.0

0.5

1.0

2.0

0.43

0.86

1.71

3.42

6.84

400 - 1050

---

CSP4

CSP8

CSP16

CSP32

epc310

epc320

160

320

epc330

Type specific characteristics (all diodes of the array connected in parallel)

Characteristics subject to change without notice

Datasheet epc3xx - V2.3

www.espros.ch

12 3 4 5 6 7...10

中文翻译

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