Datasheet > EPC2015C

EPC2015C

更新时间： 2024-09-17 22:58:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
6页	1595K
描述
TRANS GAN 40V 33A BUMPED DIE

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中文翻译

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数据手册

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EPC2015C 数据手册

eGaN® FET DATASHEET

EPC2015C

EPC2015C – Enhancement Mode Power Transistor

V_DS, 40 V

EFFICIENT POWER CONVERSION

R_DS(on), 4 mΩ

I_D, 53 A

HAL

Gallium Nitride’s exceptionally high electron mobility and low temperature coeﬃcient allows very

low R_DS(on), while its lateral device structure and majority carrier diode provide exceptionally low Q_G

and zero Q_RR. The end result is a device that can handle tasks where very high switching frequency,

and low on-time are beneﬁcial as well as those where on-state losses dominate.

Maximum Ratings

EPC2015C eGaN® FETs are supplied only in

passivated die form with solder bars

Die size: 4.1 mm x 1.6 mm

PARAMETER

Drain-to-Source Voltage (Continuous)

Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)

Continuous (T_A= 25˚C, R_θJA= 6°C/W)

Pulsed (25°C, T_PULSE= 300 µs)

VALUE

UNIT

V_DS

Applications

• High Frequency DC-DC Conversion

• Point-of-Load Converters

• Industrial Automation

• Synchronous Rectiﬁcation

• Class-D Audio

235

I_D

Gate-to-Source Voltage

V_GS

T_J

Gate-to-Source Voltage

-4

• Low Inductance Motor Drives

Operating Temperature

-40 to 150

°C

T_STGStorage Temperature

Beneﬁts

• Ultra High Eﬃciency

• Ultra Low Switching

and Conduction

Losses

Thermal Characteristics

PARAMETER

• Zero Q_RR

TYP

0.8

1.7

UNIT

• Ultra Small Footprint

R_θJC

R_θJB

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Board

°C/W

Thermal Resistance, Junction to Ambient (Note 1)

Note 1: R_θJAis determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.

See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

Static Characteristics (T_J= 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

V_GS= 0 V, I_D= 500 μA

V_GS= 0 V, V_DS= 32 V

V_GS= 5 V

MIN

TYP

MAX

UNIT

BV_DSS

I_DSS

Drain-to-Source Voltage

Drain-Source Leakage

200

400

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Gate Threshold Voltage

I_GSS

V_GS= -4 V

200

1.4

3.2

1.7

400

2.5

V_GS(TH)

R_DS(on)

V_SD

V_DS= V_GS, I_D= 9 mA

V_GS= 5 V, I_D= 33 A

I_S= 0.5 A, V_GS= 0 V

0.8

Drain-Source On Resistance

Source-Drain Forward Voltage

mΩ

All measurements were done with substrate connected to source.

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