EPA960B
Excelics
PRELIMINARY DATA SHEET
High Efficiency Heterojunction Power FET
•
•
•
+38.5dBm TYPICAL OUTPUT POWER
18.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 9600 MICRON RECESSED
“MUSHROOM” GATE
•
•
Si3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 240mA PER BIN RANGE
•
±
Chip Thickness: 50 10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
37.0
38.5
38.5
18.5
13.5
dBm
dB
P1dB
f= 4GHz
f= 2GHz
f= 4GHz
17.0
G1dB
Saturated Drain Current Vds=3V, Vgs=0V
1760 2880
1920 3120
-1.0
3760
-2.5
mA
mS
V
Idss
Gm
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=28mA
Vp
Drain Breakdown Voltage Igd=9.6mA
Source Breakdown Voltage Igs=9.6mA
Thermal Resistance (Au-Sn Eutectic Attach)
-11
-7
-15
-14
5
V
BVgd
BVgs
Rth
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
ABSOLUTE1
12V
CONTINUOUS2
8V
Vds
Vgs
Ids
-8V
-3V
Idss
2.8A
Forward Gate Current
Input Power
480mA
36dBm
175oC
80mA
Igsf
Pin
Tch
Tstg
Pt
@ 3dB Compression
150oC
-65/150oC
Channel Temperature
Storage Temperature
Total Power Dissipation
-65/175oC
27 W
23 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com