Datasheet > EPA480BV

EPA480BV

更新时间： 2024-09-26 06:57:39

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	52K
描述
High Efficiency Heterojunction Power FET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

EPA480BV 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

EPA480BV 数据手册

EPA480B/EPA480BV

UPDATED: 09/27/2007

High Efficiency Heterojunction Power FET

•

+35.5dBm TYPICAL OUTPUT POWER

7.5dB TYPICAL POWER GAIN FOR EPA480B AND

9.0dB FOR EPA480BV AT 12GHz

•

0.3X 4800 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

•

EPA480BV WITH VIA HOLE SOURCE GROUNDING

Idss SORTED IN 120mA PER BIN RANGE

Chip Thickness: 45 ± 13 microns

All Dimensions In Microns

No Via Hole For EPA480B

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS PARAMETERS/TEST CONDITIONS

EPA480B

EPA480BV

UNIT

MIN

TYP

MAX

MIN

TYP MAX

Output Power at 1dB Compression f=12GHz

34.0

35.5

34.0

35.5

9.0

P_1dB

dBm

Vds=8V, Ids=50% Idss

f=18GHz

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

6.0

7.5

G_1dB

PAE

Idss

f=12GHz

Saturated Drain Current Vds=3V, Vgs=0V

880

960

1440

1880

-2.5

880

960

1440

1520

-1.0

-15

1880

-2.5

Transconductance

Vds=3V, Vgs=0V

Vds=3V, Ids=14mA

Igd=4.8mA

1520

-1.0

-15

Pinch-off Voltage

BVgd

BVgs

Rth

Drain Breakdown Voltage

-13

-7

-13

-7

Source Breakdown Voltage Igs=4.8mA

Thermal Resistance (Au-Sn Eutectic Attach)

-14

^oC/W

MAXIMUM RATINGS AT 25^OC

EPA480B

EPA480BV

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

-8V

-3V

12V

-8V

-3V

Idss

1.4A

Idss

1.75A

Igsf

Tch

stg

Forward Gate Current

Input Power

240mA

33dBm

175^oC

-65/175^oC

14W

40mA

240mA

33dBm

175^oC

-65/175^oC

17W

40mA

@ 3dB Compression

150^oC

@ 3dB Compression

150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

-65/150^oC

11W

14W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

Page 1 of 2

September 2007

中文翻译

下载PDF

与EPA480BV相关器件

型号	品牌	获取价格	描述	数据表
EPA480C	EXCELICS	获取价格	High Efficiency Heterojunction Power FET
EPA480C-180F	EXCELICS	获取价格	High Efficiency Heterojunction Power FET
EPA480C-CP083	EXCELICS	获取价格	High Efficiency Heterojunction Power FET
EPA480C-SOT89	ETC	获取价格	DC-6GHz High Efficiency Heterojunction Power FET
EPA500-10	PCA	获取价格	14 Pin DIP High Precision Single Output TTL Compatible Active Delay Lines
EPA500-100	PCA	获取价格	14 Pin DIP High Precision Single Output TTL Compatible Active Delay Lines
EPA500-1000	PCA	获取价格	14 Pin DIP High Precision Single Output TTL Compatible Active Delay Lines
EPA500-1000-RC	PCA	获取价格	14 Pin DIP High Precision Single Output TTL Compatible Active Delay Lines
EPA500-100-RC	PCA	获取价格	14 Pin DIP High Precision Single Output TTL Compatible Active Delay Lines
EPA500-10-RC	PCA	获取价格	14 Pin DIP High Precision Single Output TTL Compatible Active Delay Lines

与EPA480BV相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

9
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

8
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

12
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

17

产品中心

服务支持

精选活动

关于我们

帮助中心

EPA480BV

EPA480BV 技术参数

EPA480BV 数据手册

与EPA480BV相关器件

与EPA480BV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

EPA480BV

EPA480BV 技术参数

EPA480BV 数据手册

与EPA480BV相关器件

与EPA480BV相关文章

您还可以找

您在本页遇到什么问题？