Datasheet > EPA080A-70

EPA080A-70

更新时间： 2022-10-31 06:05:31

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	23K
描述
High Efficiency Heterojunction Power FET

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EPA080A-70 数据手册

EPA080A-70

Excelics

DATA SHEET

High Efficiency Heterojunction Power FET

•

NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE

+25.5dBm TYPICAL OUTPUT POWER

7.0dB TYPICAL POWER GAIN AT 12GHz

0.3 X 800 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL HETEROJUNCTION PROFILE

PROVIDES EXTRA HIGH POWER EFFICIENCY,

AND HIGH RELIABILITY

All Dimensions In mils.

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=5V, Ids=50% Idss

Gain at 1dB Compression

Vds=5V, Ids=50% Idss

Power Added Efficiency at 1dB Compression

Vds=5V, Ids=50% Idss

f=12GHz

24.0

25.5

P_1dB

dBm

f=12GHz

5.5

7.0

G_1dB

PAE

f=12GHz

Idss

Saturated Drain Current Vds=3V, Vgs=0V

130

160

240

320

-2.5

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

260

-1.0

-15

Vds=3V, Ids=2.5mA

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=1.0mA

Source Breakdown Voltage Igs=1.0mA

Thermal Resistance

-10

-6

-14

135^*

^oC/W

* Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

-5V

-3V

Idss

185mA

Igsf

Tch

Tstg

Forward Gate Current

Input Power

40mA

7mA

23dBm

175^oC

-65/175^oC

@ 3dB Compression

150 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

-65/150 ^oC

1.1W

0.9W

Note: 1 Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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