Datasheet > EON25F80

EON25F80

更新时间： 2024-11-25 00:04:27

品牌	Logo	应用领域
其他 - ETC		闪存
页数	文件大小	规格书
33页	455K
描述
8 Mbit Serial Flash Memory with 4Kbytes Uniform Sector EON公司的8Mbit FLASH

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数据手册

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EON25F80 数据手册

EN25F80

8 Mbit Serial Flash Memory with 4Kbytes Uniform Sector

FEATURES

- Write Protect all or portion of memory via

• Single power supply operation

software

- Full voltage range: 2.7-3.6 volt

- Enable/Disable protection with WP# pin

• 8 Mbit Serial Flash

• High performance program/erase speed

- 8 M-bit/1024 K-byte/4096 pages

- Page program time: 1.5ms typical

- 256 bytes per programmable page

- Sector erase time: 150ms typical

- Block erase time 800ms typical

- Chip erase time: 10 Seconds typical

• High performance

- 100MHz clock rate

• Low power consumption

- 5 mA typical active current

- 1 μA typical power down current

• Lockable 256 byte OTP security sector

• Minimum 100K endurance cycle

• Package Options

- 8 pins SOP 200mil body width

- 8 contact VDFN

- 8 pins PDIP

• Uniform Sector Architecture:

- 256 sectors of 4-Kbyte

- 16 blocks of 64-Kbyte

- Any sector or block can be

erased individually

- All Pb-free packages are RoHS compliant

• Commercial and industrial temperature

Range

• Software and Hardware Write Protection:

GENERAL DESCRIPTION

The EN25F80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to

256 bytes at a time, using the Page Program instruction.

The EN25F80 is designed to allow either single Sector at a time or full chip erase operation. The

EN25F80 can be configured to protect part of the memory as the software protected mode. The device

can sustain a minimum of 100K program/erase cycles on each sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. D, Issue Date: 2007/05/16

12 3 4 5 6 7...33

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