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ENA0923A PDF预览

ENA0923A

更新时间: 2024-11-05 12:55:31
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
7页 559K
描述
General-Purpose Switching Device Applications

ENA0923A 数据手册

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Ordering number : ENA0923A  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
CPH6337  
Features  
Ultrahigh-speed switching  
1.8V drive  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--12  
±10  
--3.5  
--14  
1.6  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW 10 s, duty cycle 1%  
A
μ
DP  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
When mounted on ceramic substrate (1200mm2 0.8mm)  
W
°C  
°C  
×
D
Tch  
150  
Tstg  
--55 to +150  
This product is designed to “ESD immunity < 200V ”, so please take care when handling.  
*
Machine Model  
*
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: CPH6  
7018A-003  
• JEITA, JEDEC  
: SC-74, SOT-26, SOT-457  
• Minimum Packing Quantity : 3,000 pcs./reel  
2.9  
0.15  
0.05  
CPH6337-TL-E  
6
5
4
3
Packing Type: TL  
Marking  
1
2
TL  
0.95  
1 : Drain  
2 : Drain  
3 : Gate  
0.4  
Electrical Connection  
4 : Source  
5 : Drain  
6 : Drain  
1, 2, 5, 6  
SANYO : CPH6  
3
4
http://semicon.sanyo.com/en/network  
61312 TKIM/91907PE TIIM TC-00000903  
No. A0923-1/7  

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