Datasheet > 存储 > 闪存> EN29SL800T-90TI

EN29SL800T-90TI

更新时间： 2024-11-18 04:41:15

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
43页	337K
描述
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only

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EN29SL800T-90TI 数据手册

EN29SL800

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 1.8 Volt-only

FEATURES

• Single power supply operation

- Full voltage range:1.65-2.2 volt for read and

write operations.

• High performance program/erase speed

- Byte/Word program time: 5µs/7µs typical

- Sector erase time: 500ms typical

- Ideal for battery-powered applications.

• JEDEC Standard Embedded Erase and

Program Algorithms

• High performance

- Access times as fast as 70 ns

• JEDEC standard DATA# polling and toggle

bits feature

• Low power consumption (typical values at 5

MHz)

- 15 mA typical active read current

- 15 mA typical program/erase current

- 0.2 μA typical standby current

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

• Flexible Sector Architecture:

- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,

and fifteen 64-Kbyte sectors (byte mode)

- One 8-Kword, two 4-Kword, one 16-Kword

and fifteen 32-Kword sectors (word mode)

• Low Vcc write inhibit < 1.2V

• Minimum 100K endurance cycle

• Package Options

• Sector protection:

- 48-pin TSOP (Type 1)

- Hardware locking of sectors to prevent

program or erase operations within individual

sectors

- Additionally, temporary Sector Unprotect

allows code changes in previously locked

sectors.

- 48-ball 6mm x 8mm FBGA

- 48-ball 5mm x 6mm WFBGA

- 48-ball 5mm x 6mm WLGA

• Commercial and industrial temperature

Range

GENERAL DESCRIPTION

The EN29SL800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 5µs. The

EN29SL800 features 1.8V voltage read and write operation, with access time as fast as 70ns to

eliminate the need for WAIT statements in high-performance microprocessor systems.

The EN29SL800 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full chip erase operation, where each sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of

100K program/erase cycles on each sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. D, Issue Date: 2006/11/06

12 3 4 5 6 7...43

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与EN29SL800T-90TI相关器件

型号	品牌	获取价格	描述	数据表
EN29SL800T-90TIP	EON	获取价格	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8
EN2-B1H1	NEC	获取价格	Twin relay for motor and solenoid reversible control
EN2-B1H1S	NEC	获取价格	Twin relay for motor and solenoid reversible control
EN2-B1H1ST	NEC	获取价格	Twin relay for motor and solenoid reversible control
EN2-B1H1T	NEC	获取价格	Twin relay for motor and solenoid reversible control
EN2-B1H2	NEC	获取价格	Twin relay for motor and solenoid reversible control
EN2-B1H2S	NEC	获取价格	Twin relay for motor and solenoid reversible control
EN2-B1H2ST	NEC	获取价格	Twin relay for motor and solenoid reversible control
EN2-B1H2T	NEC	获取价格	Twin relay for motor and solenoid reversible control
EN2-B1H3	NEC	获取价格	Twin relay for motor and solenoid reversible control

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