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EN29SL800B-70TI

更新时间： 2024-11-18 04:41:15
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
43页 337K
描述
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only

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EN29SL800B-70TI 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：TSOP1, TSSOP48,.8,20Reach Compliance Code：unknown
风险等级：5.72最长访问时间：70 ns
备用内存宽度：8启动块：BOTTOM
命令用户界面：YES数据轮询：YES
耐久性：1000000 Write/Erase CyclesJESD-30 代码：R-PDSO-G48
JESD-609代码：e0内存密度：8388608 bit
内存集成电路类型：FLASH内存宽度：16
部门数/规模：1,2,1,15端子数量：48
字数：524288 words字数代码：512000
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX16封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP48,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：PARALLEL电源：1.8/2 V
认证状态：Not Qualified就绪/忙碌：YES
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：YES
类型：NOR TYPE

EN29SL800B-70TI 数据手册

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EN29SL800  
EN29SL800  
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 1.8 Volt-only  
FEATURES  
• Single power supply operation  
- Full voltage range:1.65-2.2 volt for read and  
write operations.  
• High performance program/erase speed  
- Byte/Word program time: 5µs/7µs typical  
- Sector erase time: 500ms typical  
- Ideal for battery-powered applications.  
• JEDEC Standard Embedded Erase and  
Program Algorithms  
• High performance  
- Access times as fast as 70 ns  
• JEDEC standard DATA# polling and toggle  
bits feature  
• Low power consumption (typical values at 5  
MHz)  
- 15 mA typical active read current  
- 15 mA typical program/erase current  
- 0.2 μA typical standby current  
• Single Sector and Chip Erase  
• Sector Unprotect Mode  
• Erase Suspend / Resume modes:  
Read or program another Sector during  
Erase Suspend Mode  
• Flexible Sector Architecture:  
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,  
and fifteen 64-Kbyte sectors (byte mode)  
- One 8-Kword, two 4-Kword, one 16-Kword  
and fifteen 32-Kword sectors (word mode)  
• Low Vcc write inhibit < 1.2V  
• Minimum 100K endurance cycle  
• Package Options  
• Sector protection:  
- 48-pin TSOP (Type 1)  
- Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
- Additionally, temporary Sector Unprotect  
allows code changes in previously locked  
sectors.  
- 48-ball 6mm x 8mm FBGA  
- 48-ball 5mm x 6mm WFBGA  
- 48-ball 5mm x 6mm WLGA  
• Commercial and industrial temperature  
Range  
GENERAL DESCRIPTION  
The EN29SL800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 5µs. The  
EN29SL800 features 1.8V voltage read and write operation, with access time as fast as 70ns to  
eliminate the need for WAIT statements in high-performance microprocessor systems.  
The EN29SL800 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)  
controls, which eliminate bus contention issues. This device is designed to allow either single Sector  
or full chip erase operation, where each sector can be individually protected against program/erase  
operations or temporarily unprotected to erase or program. The device can sustain a minimum of  
100K program/erase cycles on each sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. D, Issue Date: 2006/11/06  
1234567...43

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