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EN29LV800BT-55RBIP PDF预览

EN29LV800BT-55RBIP

更新时间: 2024-09-29 05:10:27
品牌 Logo 应用领域
EON 闪存存储内存集成电路
页数 文件大小 规格书
41页 346K
描述
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

EN29LV800BT-55RBIP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FBGA, BGA48,6X8,32Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
最长访问时间:55 ns备用内存宽度:8
启动块:TOP命令用户界面:YES
数据轮询:YES耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PBGA-B48内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:16
部门数/规模:1,2,1,15端子数量:48
字数:524288 words字数代码:512000
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX16封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
并行/串行:PARALLEL电源:3.3 V
认证状态:Not Qualified就绪/忙碌:YES
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.03 mA
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM切换位:YES
类型:NOR TYPEBase Number Matches:1

EN29LV800BT-55RBIP 数据手册

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EN29LV800B  
EN29LV800B  
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
FEATURES  
Sector protection:  
- Hardware locking of sectors to prevent  
Single power supply operation  
- Full voltage range: 2.7-3.6 volt read and write  
operations for battery-powered applications.  
- Regulated voltage range: 3.0-3.6 volt read  
and write operations and for compatibility with  
high performance 3.3 volt microprocessors.  
program or erase operations within individual  
sectors  
- Additionally, temporary Sector Unprotect  
allows code changes in previously locked  
sectors.  
High performance  
- Access times as fast as 55 ns  
JEDEC Standard Embedded Erase and  
Program Algorithms  
Low power consumption (typical values at 5  
MHz)  
JEDEC standard DATA# polling and toggle  
bits feature  
- 7 mA typical active read current  
- 15 mA typical program/erase current  
- 1 µA typical standby current (standard access  
time to active mode)  
Single Sector and Chip Erase  
Sector Unprotect Mode  
Erase Suspend / Resume modes:  
Read or program another Sector during  
Erase Suspend Mode  
Flexible Sector Architecture:  
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,  
and fifteen 64-Kbyte sectors (byte mode)  
- One 8-Kword, two 4-Kword, one 16-Kword  
and fifteen 32-Kword sectors (word mode)  
Low Vcc write inhibit < 2.5V  
Minimum 100K endurance cycle  
Package Options  
High performance program/erase speed  
- Byte/Word program time: 8µs typical  
- Sector erase time: 500ms typical  
- 48-pin TSOP (Type 1)  
- 48-ball 6mm x 8mm FBGA  
Commercial and industrial temperature  
Range  
GENERAL DESCRIPTION  
The EN29LV800B is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The  
EN29LV800B features 3.0V voltage read and write operation, with access time as fast as 55ns to  
eliminate the need for WAIT statements in high-performance microprocessor systems.  
The EN29LV800B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)  
controls, which eliminate bus contention issues. This device is designed to allow either single Sector  
or full chip erase operation, where each sector can be individually protected against program/erase  
operations or temporarily unprotected to erase or program. The device can sustain a minimum of  
100K program/erase cycles on each sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. G, Issue Date: 2006/05/16  

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