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EN29LV800AB-70BI PDF预览

EN29LV800AB-70BI

更新时间： 2024-09-29 05:10:27
品牌 Logo 应用领域
EON 闪存存储内存集成电路
页数 文件大小 规格书
41页 591K
描述
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV800AB-70BI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FBGA, BGA48,6X8,32Reach Compliance Code：unknown
风险等级：5.92Is Samacsys：N
最长访问时间：70 ns备用内存宽度：8
启动块：BOTTOM命令用户界面：YES
数据轮询：YES耐久性：1000000 Write/Erase Cycles
JESD-30 代码：R-PBGA-B48JESD-609代码：e0
内存密度：8388608 bit内存集成电路类型：FLASH
内存宽度：16部门数/规模：1,2,1,15
端子数量：48字数：524288 words
字数代码：512000最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX16
封装主体材料：PLASTIC/EPOXY封装代码：FBGA
封装等效代码：BGA48,6X8,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, FINE PITCH并行/串行：PARALLEL
电源：3/3.3 V认证状态：Not Qualified
就绪/忙碌：YES部门规模：16K,8K,32K,64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.03 mA表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
切换位：YES类型：NOR TYPE
Base Number Matches：1

EN29LV800AB-70BI 数据手册

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EN29LV800A  
EN29LV800A  
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
FEATURES  
Additionally, temporary Sector Unprotect  
allows code changes in previously locked  
sectors.  
• Single power supply operation  
- Full voltage range: 2.7-3.6 volt read and write  
operations for battery-powered applications.  
- Regulated voltage range: 3.0-3.6 volt read  
and write operations and for compatibility with  
high performance 3.3 volt microprocessors.  
• High performance program/erase speed  
- Byte/Word program time: 8µs typical  
- Sector erase time: 500ms typical  
• Manufactured on 0.18 µm triple-metal double  
poly triple-well CMOS Flash Technology  
• JEDEC Standard Embedded Erase and  
Program Algorithms  
• JEDEC standard DATA# polling and toggle  
bits feature  
• High performance  
- Access times as fast as 55 ns  
• Single Sector and Chip Erase  
• Sector Unprotect Mode  
• Low power consumption (typical values at 5  
MHz)  
- 7 mA typical active read current  
- 15 mA typical program/erase current  
- 1 µA typical standby current (standard access  
time to active mode)  
• Erase Suspend / Resume modes:  
Read or program another Sector during  
Erase Suspend Mode  
• Low Vcc write inhibit < 2.5V  
• Minimum 1,000K endurance cycle  
• Package Options  
• Flexible Sector Architecture:  
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,  
and fifteen 64-Kbyte sectors (byte mode)  
- One 8-Kword, two 4-Kword, one 16-Kword  
and fifteen 32-Kword sectors (word mode)  
- 48-pin TSOP (Type 1)  
- 48-ball 6mm x 8mm FBGA  
• Sector protection:  
• Commercial and industrial temperature  
Range  
- Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
GENERAL DESCRIPTION  
The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs.  
The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 55ns  
to eliminate the need for WAIT statements in high-performance microprocessor systems.  
The EN29LV800A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)  
controls, which eliminate bus contention issues. This device is designed to allow either single  
Sector or full chip erase operation, where each sector can be individually protected against  
program/erase operations or temporarily unprotected to erase or program. The device can sustain  
a minimum of 1,000K program/erase cycles on each sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. C, Issue Date: 2005/01/10  
1234567...41

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