Datasheet > 存储 > 闪存> EN29LV641H-70WCP

EN29LV641H-70WCP

更新时间： 2024-09-29 06:57:15

品牌	Logo	应用领域
EON		/
页数	文件大小	规格书
46页	523K
描述
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory

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EN29LV641H-70WCP 数据手册

EN29LV641H/L EN29LV640U

64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only

Uniform Sector Flash Memory

FEATURES

• Single power supply operation

Software features:

- Full voltage range: 2.7 to 3.6 volts for read,

erase and program operations

• Sector Group Protection

- Provide locking of sectors to prevent program

or erase operations within individual sectors

- Additionally, temporary Sector Group

Unprotect allows code changes in previously

protected sectors.

• Low power consumption (typical values at 5

MHz)

- 9 mA typical active read current

- 20 mA typical program/erase current

- Less than 1 µA current in standby or automatic

sleep mode.

• Standard DATA# polling and toggle bits

feature

• Unlock Bypass Program command supported

• JEDEC standards compatible

- Pinout and software compatible with single-

power supply Flash standard

• Sector Erase Suspend / Resume modes:

Read and program another Sector during

Sector Erase Suspend Mode

• Manufactured on 0.18μm process

technology

• Support JEDEC Common Flash Interface

(CFI).

• Flexible Sector Architecture:

- One hundred and twenty-eight 32K-Word

sectors.

Hardware features:

• RESET# hardware reset pin

- Hardware method to reset the device to read

mode.

• Minimum 100K program/erase endurance

cycles.

• WP# input pin

- Write Protect (WP#) function allows

protection of first or last 32K-word sector,

regardless of previous sector protect status

• High performance for program and erase

- Word program time: 8µs typical

- Sector Erase time: 500ms typical

- Chip Erase time: 64s typical

• ACC input pin

• Package Options

- Acceleration (ACC) function provides

accelerated program times for higher

throughput for manufacturing.

- 48-pin TSOP

- 63 ball 11mm x 12mm FBGA

GENERAL DESCRIPTION

The EN29LV641H/L / EN29LV640U is a 64-Megabit (4,194,304x16), electrically erasable, read/write

non-volatile flash memory. Any word can be programmed typically in 8µs. This device is entirely

command set compatible with the JEDEC single-power-supply Flash standard.

The EN29LV641H/L / EN29LV640U is designed to allow either single Sector or full Chip erase

operation, where each Sector Group can be protected against program/erase operations or

temporarily unprotected to erase or program. The device can sustain a minimum of 100K

program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. B, Issue Date: 2005/06/27

12 3 4 5 6 7...46

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与EN29LV641H-70WCP相关器件

型号	品牌	获取价格	描述	数据表
EN29LV641H-70WIP	EON	获取价格	64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
EN29LV641H-90	EON	获取价格	64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
EN29LV641H-90TC	EON	获取价格	Flash, 4MX16, 90ns, PDSO48
EN29LV641H-90TCP	EON	获取价格	64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
EN29LV641H-90TI	EON	获取价格	Flash, 4MX16, 90ns, PDSO48
EN29LV641H-90TIP	EON	获取价格	64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
EN29LV641H-90WCP	EON	获取价格	64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
EN29LV641H-90WIP	EON	获取价格	64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
EN29LV641L	EON	获取价格	64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
EN29LV641L-70RTC	EON	获取价格	Flash, 4MX16, 70ns, PDSO48

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