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EN29LV640U-90WI PDF预览

EN29LV640U-90WI

更新时间： 2024-11-16 12:59:39
品牌 Logo 应用领域
EON /
页数 文件大小 规格书
46页 523K
描述
Flash, 4MX16, 90ns, PBGA63, FBGA-63

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EN29LV640U-90WI 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：TFBGA, BGA63,8X12,32Reach Compliance Code：unknown
风险等级：5.72最长访问时间：90 ns
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PBGA-B63
JESD-609代码：e0内存密度：67108864 bit
内存集成电路类型：FLASH内存宽度：16
部门数/规模：128端子数量：63
字数：4194304 words字数代码：4000000
最高工作温度：85 °C最低工作温度：-40 °C
组织：4MX16封装主体材料：PLASTIC/EPOXY
封装代码：FBGA封装等效代码：BGA63,8X12,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, FINE PITCH
并行/串行：PARALLEL电源：3/3.3 V
认证状态：Not Qualified就绪/忙碌：YES
部门规模：32K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM切换位：YES
类型：NOR TYPEBase Number Matches：1

EN29LV640U-90WI 数据手册

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EN29LV641H/L EN29LV640U  
EN29LV641H/L EN29LV640U  
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only  
Uniform Sector Flash Memory  
FEATURES  
• Single power supply operation  
„
Software features:  
- Full voltage range: 2.7 to 3.6 volts for read,  
erase and program operations  
• Sector Group Protection  
- Provide locking of sectors to prevent program  
or erase operations within individual sectors  
- Additionally, temporary Sector Group  
Unprotect allows code changes in previously  
protected sectors.  
• Low power consumption (typical values at 5  
MHz)  
- 9 mA typical active read current  
- 20 mA typical program/erase current  
- Less than 1 µA current in standby or automatic  
sleep mode.  
• Standard DATA# polling and toggle bits  
feature  
• Unlock Bypass Program command supported  
• JEDEC standards compatible  
- Pinout and software compatible with single-  
power supply Flash standard  
• Sector Erase Suspend / Resume modes:  
Read and program another Sector during  
Sector Erase Suspend Mode  
• Manufactured on 0.18μm process  
technology  
• Support JEDEC Common Flash Interface  
(CFI).  
• Flexible Sector Architecture:  
- One hundred and twenty-eight 32K-Word  
sectors.  
„
Hardware features:  
• RESET# hardware reset pin  
- Hardware method to reset the device to read  
mode.  
• Minimum 100K program/erase endurance  
cycles.  
• WP# input pin  
- Write Protect (WP#) function allows  
protection of first or last 32K-word sector,  
regardless of previous sector protect status  
• High performance for program and erase  
- Word program time: 8µs typical  
- Sector Erase time: 500ms typical  
- Chip Erase time: 64s typical  
• ACC input pin  
• Package Options  
- Acceleration (ACC) function provides  
accelerated program times for higher  
throughput for manufacturing.  
- 48-pin TSOP  
- 63 ball 11mm x 12mm FBGA  
GENERAL DESCRIPTION  
The EN29LV641H/L / EN29LV640U is a 64-Megabit (4,194,304x16), electrically erasable, read/write  
non-volatile flash memory. Any word can be programmed typically in 8µs. This device is entirely  
command set compatible with the JEDEC single-power-supply Flash standard.  
The EN29LV641H/L / EN29LV640U is designed to allow either single Sector or full Chip erase  
operation, where each Sector Group can be protected against program/erase operations or  
temporarily unprotected to erase or program. The device can sustain a minimum of 100K  
program/erase cycles on each Sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. B, Issue Date: 2005/06/27  
1234567...46

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EN29LV641H-70WIP EON

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 		64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
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 		64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory

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