Datasheet > EN29LV640

EN29LV640

更新时间： 2024-09-25 05:10:27

品牌	Logo	应用领域
EON		/
页数	文件大小	规格书
45页	424K
描述
64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory

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EN29LV640 数据手册

EN29LV640

64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only,

Uniform Sector Flash Memory

FEATURES

• Single power supply operation

Software features:

- Full voltage range: 2.7 to 3.6 volts for read,

erase and program operations

• Sector Group Protection

- Provide locking of sectors to prevent program

or erase operations within individual sectors

- Additionally, temporary Sector Group

Unprotect allows code changes in previously

protected sectors.

• Low power consumption (typical values at 5

MHz)

- 9 mA typical active read current

- 20 mA typical program/erase current

- Less than 1 μA current in standby or automatic

sleep mode.

• Standard DATA# polling and toggle bits

feature

• Unlock Bypass Program command supported

• JEDEC standards compatible

- Pinout and software compatible with single-

power supply Flash standard

• Sector Erase Suspend / Resume modes:

Read and program another Sector during

Sector Erase Suspend Mode

• Manufactured on 0.18μm process

technology

• Support JEDEC Common Flash Interface

(CFI).

• Flexible Sector Architecture:

Hardware features:

One hundred and twenty-eight 32K-Word /

64K-byte sectors.

• Pin compatible to lower density, easy

replacement for code expansion.

• Minimum 100K program/erase endurance

• RESET# hardware reset pin

cycles.

- Hardware method to reset the device to read

mode.

• High performance for program and erase

- Word program time: 8µs typical

- Sector Erase time: 500ms typical

- Chip Erase time: 64s typical

• WP#/ACC input pin

- Write Protect (WP#) function allows

protection of first or last 32K-word sector,

regardless of previous sector protect status

• Package Options

- Acceleration (ACC) function provides

accelerated program times

- 48-pin TSOP

- 48-ball FBGA

GENERAL DESCRIPTION

The EN29LV640H/L / EN29LV640U is a 64-Megabit ( 4Mx16 ), electrically erasable, read/write non-

volatile flash memory. Any word can be programmed typically in 8µs. This device is entirely

command set compatible with the JEDEC single-power-supply Flash standard.

The EN29LV640H/L / EN29LV640U is designed to allow either single Sector or full Chip erase

operation, where each Sector Group can be protected against program/erase operations or

temporarily unprotected to erase or program. The device can sustain a minimum of 100K

program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2007/01/23

12 3 4 5 6 7...45

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与EN29LV640相关器件

型号	品牌	获取价格	描述	数据表
EN29LV640A	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640AB-90BIP	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640AB-90TIP	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640AT-90BIP	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640AT-90TIP	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640B-70B	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640B-70BC	EON	获取价格	Flash, 4MX16, 70ns, PBGA48
EN29LV640B-70BCP	EON	获取价格	Flash, 4MX16, 70ns, PBGA48
EN29LV640B-70BI	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640B-70BIP	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt

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