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EN29LV400AT-90TI PDF预览

EN29LV400AT-90TI

更新时间： 2024-01-02 14:11:39
品牌 Logo 应用领域
EON 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
41页 378K
描述
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV400AT-90TI 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：TSOP1, TSSOP48,.8,20Reach Compliance Code：unknown
风险等级：5.77Is Samacsys：N
最长访问时间：90 ns备用内存宽度：8
启动块：TOP命令用户界面：YES
数据轮询：YES耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G48JESD-609代码：e0
内存密度：4194304 bit内存集成电路类型：FLASH
内存宽度：16部门数/规模：1,2,1,7
端子数量：48字数：262144 words
字数代码：256000最高工作温度：85 °C
最低工作温度：-40 °C组织：256KX16
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行：PARALLEL
电源：3/3.3 V认证状态：Not Qualified
就绪/忙碌：YES部门规模：16K,8K,32K,64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.03 mA表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
切换位：YES类型：NOR TYPE
Base Number Matches：1

EN29LV400AT-90TI 数据手册

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EN29LV400A  
EN29LV400A  
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
• 3V, single power supply operation  
• High performance program/erase speed  
- Byte/Word program time: 8µs typical  
- Sector erase time: 500ms typical  
- Full voltage range: 2.7-3.6 volt read and write  
operations for battery-powered applications.  
- Regulated voltage range: 3.0-3.6 volt read  
and write operations for compatibility with  
high performance 3.3 volt microprocessors.  
• JEDEC Standard Embedded Erase and  
Program Algorithms  
• High performance  
- Access times as fast as 45 ns  
• JEDEC standard DATA# polling and toggle  
bits feature  
• Single Sector and Chip Erase  
• Sector Unprotect Mode  
• Low power consumption (typical values at 5  
MHz)  
- 7 mA typical active read current  
- 15 mA typical program/erase current  
- 1 µA typical standby current (standard access  
time to active mode)  
• Erase Suspend / Resume modes:  
Read or program another Sector during  
Erase Suspend Mode  
• triple-metal double-poly triple-well CMOS  
Flash Technology  
• Flexible Sector Architecture:  
- One 16 K-byte, two 8 K-byte, one 32 K-byte,  
and seven 64 K-byte sectors (byte mode)  
- One 8 K-word, two 4 K-word, one 16 K-word  
and seven 32 K-word sectors (word mode)  
• Low Vcc write inhibit < 2.5V  
• minimum 1,000K program/erase endurance  
cycle  
• Package Options  
• Sector protection:  
- Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
- 48-pin TSOP (Type 1)  
- 48-ball 6mm x 8mm FBGA  
• Commercial and Industrial Temperature  
Range  
- Additionally, temporary Sector Unprotect  
allows code changes in previously locked  
sectors.  
GENERAL DESCRIPTION  
The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The  
EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to  
eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV400A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)  
controls, which eliminate bus contention issues. This device is designed to allow either single  
Sector or full chip erase operation, where each Sector can be individually protected against  
program/erase operations or temporarily unprotected to erase or program. The device can sustain  
a minimum of 100K program/erase cycles on each Sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. A, Issue Date: 2005/01/07  
1234567...41

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