Datasheet > 存储 > 闪存> EN29LV400AB-90BIP

EN29LV400AB-90BIP

更新时间： 2024-01-23 06:14:58

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
41页	378K
描述
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV400A

4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

• 3V, single power supply operation

• High performance program/erase speed

- Byte/Word program time: 8µs typical

- Sector erase time: 500ms typical

- Full voltage range: 2.7-3.6 volt read and write

operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read

and write operations for compatibility with

high performance 3.3 volt microprocessors.

• JEDEC Standard Embedded Erase and

Program Algorithms

• High performance

- Access times as fast as 45 ns

• JEDEC standard DATA# polling and toggle

bits feature

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Low power consumption (typical values at 5

MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 µA typical standby current (standard access

time to active mode)

• Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

• triple-metal double-poly triple-well CMOS

Flash Technology

• Flexible Sector Architecture:

- One 16 K-byte, two 8 K-byte, one 32 K-byte,

and seven 64 K-byte sectors (byte mode)

- One 8 K-word, two 4 K-word, one 16 K-word

and seven 32 K-word sectors (word mode)

• Low Vcc write inhibit < 2.5V

• minimum 1,000K program/erase endurance

cycle

• Package Options

• Sector protection:

- Hardware locking of sectors to prevent

program or erase operations within individual

sectors

- 48-pin TSOP (Type 1)

- 48-ball 6mm x 8mm FBGA

• Commercial and Industrial Temperature

Range

- Additionally, temporary Sector Unprotect

allows code changes in previously locked

sectors.

GENERAL DESCRIPTION

The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The

EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to

eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV400A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single

Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain

a minimum of 100K program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. A, Issue Date: 2005/01/07

12 3 4 5 6 7...41

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与EN29LV400AB-90BIP相关器件

型号	品牌	获取价格	描述	数据表
EN29LV400AB-90TC	EON	获取价格	4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
EN29LV400AB-90TCP	EON	获取价格	4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
EN29LV400AB-90TI	EON	获取价格	4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
EN29LV400AB-90TIP	EON	获取价格	4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
EN29LV400AT-45RBC	EON	获取价格	4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
EN29LV400AT45RBCP	EON	获取价格	4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
EN29LV400AT-45RBCP	EON	获取价格	4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
EN29LV400AT-45RBI	EON	获取价格	4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
EN29LV400AT45RBIP	EON	获取价格	4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
EN29LV400AT-45RBIP	EON	获取价格	4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V

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