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EN29LV400AB-70TCP PDF预览

EN29LV400AB-70TCP

更新时间： 2024-02-23 08:52:44
品牌 Logo 应用领域
EON 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
41页 378K
描述
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV400AB-70TCP 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：TSOP1, TSSOP48,.8,20Reach Compliance Code：unknown
HTS代码：8542.32.00.51风险等级：5.6
最长访问时间：70 ns备用内存宽度：8
启动块：BOTTOM命令用户界面：YES
数据轮询：YES耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G48长度：18.4 mm
内存密度：4194304 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
部门数/规模：1,2,1,7端子数量：48
字数：262144 words字数代码：256000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256KX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3/3.3 V
编程电压：3 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：YES类型：NOR TYPE
宽度：12 mmBase Number Matches：1

EN29LV400AB-70TCP 数据手册

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EN29LV400A  
EN29LV400A  
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
• 3V, single power supply operation  
• High performance program/erase speed  
- Byte/Word program time: 8µs typical  
- Sector erase time: 500ms typical  
- Full voltage range: 2.7-3.6 volt read and write  
operations for battery-powered applications.  
- Regulated voltage range: 3.0-3.6 volt read  
and write operations for compatibility with  
high performance 3.3 volt microprocessors.  
• JEDEC Standard Embedded Erase and  
Program Algorithms  
• High performance  
- Access times as fast as 45 ns  
• JEDEC standard DATA# polling and toggle  
bits feature  
• Single Sector and Chip Erase  
• Sector Unprotect Mode  
• Low power consumption (typical values at 5  
MHz)  
- 7 mA typical active read current  
- 15 mA typical program/erase current  
- 1 µA typical standby current (standard access  
time to active mode)  
• Erase Suspend / Resume modes:  
Read or program another Sector during  
Erase Suspend Mode  
• triple-metal double-poly triple-well CMOS  
Flash Technology  
• Flexible Sector Architecture:  
- One 16 K-byte, two 8 K-byte, one 32 K-byte,  
and seven 64 K-byte sectors (byte mode)  
- One 8 K-word, two 4 K-word, one 16 K-word  
and seven 32 K-word sectors (word mode)  
• Low Vcc write inhibit < 2.5V  
• minimum 1,000K program/erase endurance  
cycle  
• Package Options  
• Sector protection:  
- Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
- 48-pin TSOP (Type 1)  
- 48-ball 6mm x 8mm FBGA  
• Commercial and Industrial Temperature  
Range  
- Additionally, temporary Sector Unprotect  
allows code changes in previously locked  
sectors.  
GENERAL DESCRIPTION  
The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The  
EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to  
eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV400A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)  
controls, which eliminate bus contention issues. This device is designed to allow either single  
Sector or full chip erase operation, where each Sector can be individually protected against  
program/erase operations or temporarily unprotected to erase or program. The device can sustain  
a minimum of 100K program/erase cycles on each Sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. A, Issue Date: 2005/01/07  
1234567...41

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EN29LV400AB-70TCP 替代型号

型号 品牌 替代类型 描述 数据表
MX29LV401BTC-70 Macronix

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 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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EN29LV400AB70TIP EON

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EN29LV400AB-70TIP EON

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EN29LV400AB-90BC EON

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EN29LV400AB-90BCP EON

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 		4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
EN29LV400AB-90BI EON

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 		4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
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EN29LV400AB-90TC EON

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EN29LV400AB-90TCP EON

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 		4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V
EN29LV400AB-90TI EON

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 		4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V

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